2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

A. Salhi; Y. Rouillard; J. Angellier; P. Grech; A. Vicet

doi:10.1049/el:20040281

2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

A. Salhi^*, Y. Rouillard, J. Angellier, P. Grech, A. Vicet

^*Corresponding author for this work

CEM2

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15 Citations (Scopus)

Abstract

Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm² per quantum well was obtained.

Original language	English
Pages (from-to)	424-425
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1049/el:20040281
Publication status	Published - 1 Apr 2004
Externally published	Yes

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title = "2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold",

abstract = "Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.",

author = "A. Salhi and Y. Rouillard and J. Angellier and P. Grech and A. Vicet",

year = "2004",

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doi = "10.1049/el:20040281",

language = "English",

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pages = "424--425",

journal = "Electronics Letters",

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TY - JOUR

T1 - 2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

AU - Salhi, A.

AU - Rouillard, Y.

AU - Angellier, J.

AU - Grech, P.

AU - Vicet, A.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.

AB - Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 μm in continuous-wave regime have been fabricated. In the pulsed regime for a 100 μm-wide 1600 μm-long device a record threshold current density of 76 A/cm2 per quantum well was obtained.

UR - http://www.scopus.com/inward/record.url?scp=2142841008&partnerID=8YFLogxK

U2 - 10.1049/el:20040281

DO - 10.1049/el:20040281

M3 - Article

AN - SCOPUS:2142841008

SN - 0013-5194

VL - 40

SP - 424

EP - 425

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

2.61 μm GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold

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