A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite

D. Verstraeten; C. Longeaud; A. Ben Mahmoud; H. J. Von Bardeleben; J. C. Launay; O. Viraphong; Ph C. Lemaire

doi:10.1088/0268-1242/18/11/303

A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite

D. Verstraeten^*, C. Longeaud, A. Ben Mahmoud, H. J. Von Bardeleben, J. C. Launay, O. Viraphong, Ph C. Lemaire

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The electrical and photoconductive properties of Bridgman grown vanadium-zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the Te _Cd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to E_c -0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.

Original language	English
Pages (from-to)	919-926
Number of pages	8
Journal	Semiconductor Science and Technology
Volume	18
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/18/11/303
Publication status	Published - Nov 2003
Externally published	Yes

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Verstraeten, D., Longeaud, C., Ben Mahmoud, A., Von Bardeleben, H. J., Launay, J. C., Viraphong, O., & Lemaire, P. C. (2003). A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite. Semiconductor Science and Technology, 18(11), 919-926. https://doi.org/10.1088/0268-1242/18/11/303

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title = "A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite",

abstract = "The electrical and photoconductive properties of Bridgman grown vanadium-zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the Te Cd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec -0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.",

author = "D. Verstraeten and C. Longeaud and {Ben Mahmoud}, A. and {Von Bardeleben}, {H. J.} and Launay, {J. C.} and O. Viraphong and Lemaire, {Ph C.}",

year = "2003",

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doi = "10.1088/0268-1242/18/11/303",

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Verstraeten, D, Longeaud, C, Ben Mahmoud, A, Von Bardeleben, HJ, Launay, JC, Viraphong, O & Lemaire, PC 2003, 'A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite', Semiconductor Science and Technology, vol. 18, no. 11, pp. 919-926. https://doi.org/10.1088/0268-1242/18/11/303

TY - JOUR

T1 - A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride

T2 - The case of the tellurium antisite

AU - Verstraeten, D.

AU - Longeaud, C.

AU - Ben Mahmoud, A.

AU - Von Bardeleben, H. J.

AU - Launay, J. C.

AU - Viraphong, O.

AU - Lemaire, Ph C.

PY - 2003/11

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N2 - The electrical and photoconductive properties of Bridgman grown vanadium-zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the Te Cd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec -0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.

AB - The electrical and photoconductive properties of Bridgman grown vanadium-zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the Te Cd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec -0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined.

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DO - 10.1088/0268-1242/18/11/303

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AN - SCOPUS:0242661902

SN - 0268-1242

VL - 18

SP - 919

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -

A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride: The case of the tellurium antisite

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