@inproceedings{c368b16c05bb446f9156a36179f0e459,
title = "A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm",
abstract = "A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm was presented. Semiconductor lasers were grown by molecular beam epitaxy (MBE) on 100 oriented GaSbTe doped substrate. Results showed that the thermal resistance was 50K/W on the 20-μm wide diodes and this value decreased to 10K/W on the 100-μm wide diodes. The increasing surface injection decreased series resistance from 1.6 ω to 0.3 ω.",
author = "A. P{\'e}rona and Y. Rouillard and A. Salhi and P. Grech and F. Chevrier and Yarekha, {D. A.} and A. Garnache and Baranov, {A. N.} and C. Alibert",
year = "2002",
doi = "10.1109/ICIPRM.2002.1014630",
language = "English",
isbn = "0780373200",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "743--745",
booktitle = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
note = "14th Indium Phosphide and Related Materials Conference ; Conference date: 12-05-2002 Through 16-05-2002",
}