A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm

A. Pérona*, Y. Rouillard, A. Salhi, P. Grech, F. Chevrier, D. A. Yarekha, A. Garnache, A. N. Baranov, C. Alibert

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm was presented. Semiconductor lasers were grown by molecular beam epitaxy (MBE) on 100 oriented GaSbTe doped substrate. Results showed that the thermal resistance was 50K/W on the 20-μm wide diodes and this value decreased to 10K/W on the 100-μm wide diodes. The increasing surface injection decreased series resistance from 1.6 ω to 0.3 ω.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages743-745
Number of pages3
DOIs
Publication statusPublished - 2002
Externally publishedYes
Event14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden
Duration: 12 May 200216 May 2002

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference14th Indium Phosphide and Related Materials Conference
Country/TerritorySweden
CityStockholm
Period12/05/0216/05/02

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