A new digital-pixel architecture for CMOS image sensor with pixel-level ADC and pulse width modulation using a 0.18 μm CMOS technology

Chen Xu, Chao Shen, Amine Bermak, Mansun Chan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Citations (Scopus)

Abstract

In this paper, a digital pixel architecture with pixel-level ADC based on Pulse Width Modulation (PWM) scheme and an 8-bit DRAM is proposed to operate at an extremely low voltage environment, i.e., 1.2V. This digital pixel architecture is designed to eliminate the restriction of low supply voltage imposed by device scaling trend. The pixel is implemented in a commercially available 0.18μm, single poly and 6 metal CMOS process. Simulation results show that the circuit is functional at a VDD of 1.2V with a higher dynamic range and lower power consumption as compared to conventional CMOS APS architecture.

Original languageEnglish
Title of host publication2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages265-268
Number of pages4
ISBN (Electronic)0780377494, 9780780377493
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003 - Tsimshatsui, Kowloon, Hong Kong
Duration: 16 Dec 200318 Dec 2003

Publication series

Name2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Country/TerritoryHong Kong
CityTsimshatsui, Kowloon
Period16/12/0318/12/03

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