Bipolar transistor equivalents in CMOS technology

Gyudong Kim; Min Kyu Kim; Wonchan Kim; Abdesselam Bouzerdoum

Bipolar transistor equivalents in CMOS technology

Gyudong Kim^*, Min Kyu Kim, Wonchan Kim, Abdesselam Bouzerdoum

^*Corresponding author for this work

Seoul National University

Research output: Contribution to conference › Paper › peer-review

Abstract

A CMOS circuit element equivalent to a bipolar junction transistor(BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65GHz in a 0.8μm CMOS technology and the fabricated prototype has 2.3×10^-16 A of I_s, 2.4mA of I_KF and 390V of Early voltage.

Original language	English
Pages	45-48
Number of pages	4
Publication status	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 IEEE 38th Midwest Symposium on Circuits and Systems. Part 1 (of 2) - Rio de Janeiro, Braz Duration: 13 Aug 1995 → 16 Aug 1995

Conference

Conference	Proceedings of the 1995 IEEE 38th Midwest Symposium on Circuits and Systems. Part 1 (of 2)
City	Rio de Janeiro, Braz
Period	13/08/95 → 16/08/95

Cite this

@conference{af73d728dc6e4424b8a4f99b0ea8600f,

title = "Bipolar transistor equivalents in CMOS technology",

abstract = "A CMOS circuit element equivalent to a bipolar junction transistor(BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65GHz in a 0.8μm CMOS technology and the fabricated prototype has 2.3×10-16 A of Is, 2.4mA of IKF and 390V of Early voltage.",

author = "Gyudong Kim and Kim, {Min Kyu} and Wonchan Kim and Abdesselam Bouzerdoum",

year = "1995",

language = "English",

pages = "45--48",

note = "Proceedings of the 1995 IEEE 38th Midwest Symposium on Circuits and Systems. Part 1 (of 2) ; Conference date: 13-08-1995 Through 16-08-1995",

}

TY - CONF

T1 - Bipolar transistor equivalents in CMOS technology

AU - Kim, Gyudong

AU - Kim, Min Kyu

AU - Kim, Wonchan

AU - Bouzerdoum, Abdesselam

PY - 1995

Y1 - 1995

N2 - A CMOS circuit element equivalent to a bipolar junction transistor(BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65GHz in a 0.8μm CMOS technology and the fabricated prototype has 2.3×10-16 A of Is, 2.4mA of IKF and 390V of Early voltage.

AB - A CMOS circuit element equivalent to a bipolar junction transistor(BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65GHz in a 0.8μm CMOS technology and the fabricated prototype has 2.3×10-16 A of Is, 2.4mA of IKF and 390V of Early voltage.

UR - http://www.scopus.com/inward/record.url?scp=0029463718&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029463718

SP - 45

EP - 48

T2 - Proceedings of the 1995 IEEE 38th Midwest Symposium on Circuits and Systems. Part 1 (of 2)

Y2 - 13 August 1995 through 16 August 1995

ER -

Bipolar transistor equivalents in CMOS technology

Abstract

Conference

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