BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS

Bo Wang; Man Kay Law; Amine Bermak; Fang Tang

doi:10.1109/LED.2015.2477859

BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS

Bo Wang, Man Kay Law, Amine Bermak, Fang Tang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This letter presents a compensation topology which minimizes the inter-/intra-die spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (V_be) of a bipolar junction transistor (BJT). Without using special devices, the base recombination current from a deep-saturated BJT is utilized in this scheme. Before compensation, the V_be standard deviation (STD) of 15 standalone BJTs measures 3.24 mV at 25 °C with constant external bias currents. After compensation, V_be STD of 30 dies from two batches reduces to 1.8 mV with on-chip bias current. The PTAT drift of V_be as that in typical BJT-based designs are also alleviated.

Original language	English
Article number	7254132
Pages (from-to)	1111-1113
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	11
DOIs	https://doi.org/10.1109/LED.2015.2477859
Publication status	Published - 1 Nov 2015
Externally published	Yes

Keywords

Bipolar junction transistor (BJT) process spread
Spread compensation
trimless CMOS voltage reference

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10.1109/LED.2015.2477859

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title = "BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS",

abstract = "This letter presents a compensation topology which minimizes the inter-/intra-die spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) of a bipolar junction transistor (BJT). Without using special devices, the base recombination current from a deep-saturated BJT is utilized in this scheme. Before compensation, the Vbe standard deviation (STD) of 15 standalone BJTs measures 3.24 mV at 25 °C with constant external bias currents. After compensation, Vbe STD of 30 dies from two batches reduces to 1.8 mV with on-chip bias current. The PTAT drift of Vbe as that in typical BJT-based designs are also alleviated.",

keywords = "Bipolar junction transistor (BJT) process spread, Spread compensation, trimless CMOS voltage reference",

author = "Bo Wang and Law, \{Man Kay\} and Amine Bermak and Fang Tang",

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doi = "10.1109/LED.2015.2477859",

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AU - Wang, Bo

AU - Law, Man Kay

AU - Bermak, Amine

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N2 - This letter presents a compensation topology which minimizes the inter-/intra-die spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) of a bipolar junction transistor (BJT). Without using special devices, the base recombination current from a deep-saturated BJT is utilized in this scheme. Before compensation, the Vbe standard deviation (STD) of 15 standalone BJTs measures 3.24 mV at 25 °C with constant external bias currents. After compensation, Vbe STD of 30 dies from two batches reduces to 1.8 mV with on-chip bias current. The PTAT drift of Vbe as that in typical BJT-based designs are also alleviated.

AB - This letter presents a compensation topology which minimizes the inter-/intra-die spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) of a bipolar junction transistor (BJT). Without using special devices, the base recombination current from a deep-saturated BJT is utilized in this scheme. Before compensation, the Vbe standard deviation (STD) of 15 standalone BJTs measures 3.24 mV at 25 °C with constant external bias currents. After compensation, Vbe STD of 30 dies from two batches reduces to 1.8 mV with on-chip bias current. The PTAT drift of Vbe as that in typical BJT-based designs are also alleviated.

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BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS

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