Cathodoluminescence characterization of InGaSb crystals

M. F. Chioncel; C. Díaz-Guerra; J. Piqueras; J. Vincent; V. Bermúdez; E. Diéguez

Cathodoluminescence characterization of InGaSb crystals

M. F. Chioncel^*, C. Díaz-Guerra, J. Piqueras, J. Vincent, V. Bermúdez, E. Diéguez

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

The nature and the spatial distribution of radiative defects in In _xGa_1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope, The CL results have been complemented by X-ray microanalysis and backscattered electron imaging to relate the local luminescence properties to the chemical composition. Measurements of the band gap energy from the CL spectra, supported by X-ray compositional mappings, reveal an effective incorporation of In in the matrix, leading to the formation of the ternary alloy in the whole volume of the ingot. A band often observed in the CL spectra, peaked at about 20 meV below the band gap energy, is attributed to the presence in the ternary alloy of an acceptor level that would correspond to the V_Ga-Ga_Sb acceptor in GaSb.

Original language	English
Pages	491-494
Number of pages	4
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis Duration: 16 May 2004 → 19 May 2004

Conference

Conference	Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
City	Nis
Period	16/05/04 → 19/05/04

Cite this

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title = "Cathodoluminescence characterization of InGaSb crystals",

abstract = "The nature and the spatial distribution of radiative defects in In xGa1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope, The CL results have been complemented by X-ray microanalysis and backscattered electron imaging to relate the local luminescence properties to the chemical composition. Measurements of the band gap energy from the CL spectra, supported by X-ray compositional mappings, reveal an effective incorporation of In in the matrix, leading to the formation of the ternary alloy in the whole volume of the ingot. A band often observed in the CL spectra, peaked at about 20 meV below the band gap energy, is attributed to the presence in the ternary alloy of an acceptor level that would correspond to the VGa-GaSb acceptor in GaSb.",

author = "Chioncel, {M. F.} and C. D{\'i}az-Guerra and J. Piqueras and J. Vincent and V. Berm{\'u}dez and E. Di{\'e}guez",

year = "2004",

language = "English",

pages = "491--494",

note = "Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 ; Conference date: 16-05-2004 Through 19-05-2004",

}

TY - CONF

T1 - Cathodoluminescence characterization of InGaSb crystals

AU - Chioncel, M. F.

AU - Díaz-Guerra, C.

AU - Piqueras, J.

AU - Vincent, J.

AU - Bermúdez, V.

AU - Diéguez, E.

PY - 2004

Y1 - 2004

N2 - The nature and the spatial distribution of radiative defects in In xGa1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope, The CL results have been complemented by X-ray microanalysis and backscattered electron imaging to relate the local luminescence properties to the chemical composition. Measurements of the band gap energy from the CL spectra, supported by X-ray compositional mappings, reveal an effective incorporation of In in the matrix, leading to the formation of the ternary alloy in the whole volume of the ingot. A band often observed in the CL spectra, peaked at about 20 meV below the band gap energy, is attributed to the presence in the ternary alloy of an acceptor level that would correspond to the VGa-GaSb acceptor in GaSb.

AB - The nature and the spatial distribution of radiative defects in In xGa1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope, The CL results have been complemented by X-ray microanalysis and backscattered electron imaging to relate the local luminescence properties to the chemical composition. Measurements of the band gap energy from the CL spectra, supported by X-ray compositional mappings, reveal an effective incorporation of In in the matrix, leading to the formation of the ternary alloy in the whole volume of the ingot. A band often observed in the CL spectra, peaked at about 20 meV below the band gap energy, is attributed to the presence in the ternary alloy of an acceptor level that would correspond to the VGa-GaSb acceptor in GaSb.

UR - http://www.scopus.com/inward/record.url?scp=3142756412&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3142756412

SP - 491

EP - 494

T2 - Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004

Y2 - 16 May 2004 through 19 May 2004

ER -

Cathodoluminescence characterization of InGaSb crystals

Abstract

Conference

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