Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

C. Díaz-Guerra; J. Vincent; J. Piqueras; V. Bermúdez; E. Diéguez

doi:10.1063/1.1834727

Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

C. Díaz-Guerra^*, J. Vincent, J. Piqueras, V. Bermúdez, E. Diéguez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.

Original language	English
Article number	023504
Journal	Journal of Applied Physics
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.1834727
Publication status	Published - 15 Jan 2005
Externally published	Yes

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AU - Díaz-Guerra, C.

AU - Vincent, J.

AU - Piqueras, J.

AU - Bermúdez, V.

AU - Diéguez, E.

PY - 2005/1/15

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N2 - The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.

AB - The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV, not previously observed in undoped GaSb, is generally the dominant emission. CL spectra recorded under different excitation conditions suggest that this band can be attributed to a Se-related level-to-band transition. The spatial distribution of the 765 meV emission, as observed in the CL images, indicates an inhomogeneous Se distribution in the material.

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ER -

Cathodoluminescence study of the radiative recombination properties of Se-doped GaSb crystals

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