Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths

J. Vincent; V. Bermudez; E. Dieguez; L. C. Alves; V. Corregidor; N. P. Barradas

doi:10.1016/j.jcrysgro.2004.11.022

Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths

J. Vincent^*, V. Bermudez, E. Dieguez, L. C. Alves, V. Corregidor, N. P. Barradas

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

In the present work we study a vertical feeding method (VFM) for semiconductor alloy crystal growth. VFM will allow for controlling concentration and temperature of growing material. The method consists of replenishing a growing melt by continuous feeding of the growing material. The possibility to control feeding temperature and feeding rate enables to study growth in numerous configurations. Several GaInSb ingots grown by VFM, using different growth temperature and feeding rates, have been characterized and compared with a reference ingot grown by classical vertical Bridgman technique. Ingots with mean longitudinal constant indium concentration were grown by VFM technique, with In concentration up to 10 at%.

Original language	English
Pages (from-to)	e537-e542
Journal	Journal of Crystal Growth
Volume	275
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.11.022
Publication status	Published - 15 Feb 2005
Externally published	Yes

Keywords

A2. Growth from melt
B1. Alloys
B2. Semiconducting III-V materials

Access to Document

10.1016/j.jcrysgro.2004.11.022

Cite this

@article{72cbca63e36d44c68a597f5552f7b286,

title = "Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths",

abstract = "In the present work we study a vertical feeding method (VFM) for semiconductor alloy crystal growth. VFM will allow for controlling concentration and temperature of growing material. The method consists of replenishing a growing melt by continuous feeding of the growing material. The possibility to control feeding temperature and feeding rate enables to study growth in numerous configurations. Several GaInSb ingots grown by VFM, using different growth temperature and feeding rates, have been characterized and compared with a reference ingot grown by classical vertical Bridgman technique. Ingots with mean longitudinal constant indium concentration were grown by VFM technique, with In concentration up to 10 at%.",

keywords = "A2. Growth from melt, B1. Alloys, B2. Semiconducting III-V materials",

author = "J. Vincent and V. Bermudez and E. Dieguez and Alves, {L. C.} and V. Corregidor and Barradas, {N. P.}",

year = "2005",

month = feb,

day = "15",

doi = "10.1016/j.jcrysgro.2004.11.022",

language = "English",

volume = "275",

pages = "e537--e542",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths

AU - Vincent, J.

AU - Bermudez, V.

AU - Dieguez, E.

AU - Alves, L. C.

AU - Corregidor, V.

AU - Barradas, N. P.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - In the present work we study a vertical feeding method (VFM) for semiconductor alloy crystal growth. VFM will allow for controlling concentration and temperature of growing material. The method consists of replenishing a growing melt by continuous feeding of the growing material. The possibility to control feeding temperature and feeding rate enables to study growth in numerous configurations. Several GaInSb ingots grown by VFM, using different growth temperature and feeding rates, have been characterized and compared with a reference ingot grown by classical vertical Bridgman technique. Ingots with mean longitudinal constant indium concentration were grown by VFM technique, with In concentration up to 10 at%.

AB - In the present work we study a vertical feeding method (VFM) for semiconductor alloy crystal growth. VFM will allow for controlling concentration and temperature of growing material. The method consists of replenishing a growing melt by continuous feeding of the growing material. The possibility to control feeding temperature and feeding rate enables to study growth in numerous configurations. Several GaInSb ingots grown by VFM, using different growth temperature and feeding rates, have been characterized and compared with a reference ingot grown by classical vertical Bridgman technique. Ingots with mean longitudinal constant indium concentration were grown by VFM technique, with In concentration up to 10 at%.

KW - A2. Growth from melt

KW - B1. Alloys

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=15944368057&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.11.022

DO - 10.1016/j.jcrysgro.2004.11.022

M3 - Conference article

AN - SCOPUS:15944368057

SN - 0022-0248

VL - 275

SP - e537-e542

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Comparison between vertical Bridgman and feeding techniques for GaInSb alloy growths

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this