Abstract
A complementary metal-oxide-semiconductor (CMOS) temperature sensor with wide-range sensing capability and high energy-efficiency is provided by a device, having: a bipolar junction transistor (BJT) core; an Analog to Digital Converter (ADC); a digital controller; and an amplifier configured to receive a selection signal from the digital controller to provide a voltage differential from the BJT core to the ADC at one of a first gain or a second gain, different from the first gain based on a temperature sensed by the BJT core. Additionally, a method of operation thereof is provided that includes: calibrating first and second gains associated with respective first and second temperature ranges for a temperature sensor at a shared temperature; determining whether a reading temperature for the temperature sensor is within the first or second temperature range; and applying one gain based on which temperature range the reading temperature is within.
Original language | English |
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Patent number | US2023392991 |
IPC | H03M 1/ 12 A I |
Priority date | 1/06/23 |
Publication status | Published - 7 Dec 2023 |