Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices

C. M. Ruiz; X. Fontané; A. Fairbrother; V. Izquierdo-Roca; C. Broussillou; S. Bodnar; A. Pérez-Rodriguez; V. Bermudez

doi:10.1109/PVSC.2012.6317656

Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices

C. M. Ruiz^*, X. Fontané, A. Fairbrother, V. Izquierdo-Roca, C. Broussillou, S. Bodnar, A. Pérez-Rodriguez, V. Bermudez

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

One of the limitations of online quality control processes is the inability of detecting electronic defects in semiconductor materials. This is particularly important in low cost processes such as electrodeposited Cu(In,Ga)(S,Se)₂ solar cells, due to the large number of inhomogeneities that can be expected. Standard techniques for characterizing electronic defects are not suitable for online control. However, optical techniques such as Raman scattering can be specially suited for online process monitoring applications. In this paper we analyze the correlation between the Raman spectral features and the presence of electronic defects. Our results confirm the potential of Raman spectroscopy for the indirect detection of point defects which are important for device performance.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	455-458
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317656
Publication status	Published - 2012
Externally published	Yes
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

Keywords

Admittance measurement
Materials testing
Measurement techniques
Photovoltaic cells
Raman scattering
Thin film devices

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10.1109/PVSC.2012.6317656

Cite this

Ruiz, C. M., Fontané, X., Fairbrother, A., Izquierdo-Roca, V., Broussillou, C., Bodnar, S., Pérez-Rodriguez, A., & Bermudez, V. (2012). Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 455-458). Article 6317656 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2012.6317656

@inproceedings{7b7f75c299bf4405af1a9a2c2aa413c2,

title = "Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices",

abstract = "One of the limitations of online quality control processes is the inability of detecting electronic defects in semiconductor materials. This is particularly important in low cost processes such as electrodeposited Cu(In,Ga)(S,Se)2 solar cells, due to the large number of inhomogeneities that can be expected. Standard techniques for characterizing electronic defects are not suitable for online control. However, optical techniques such as Raman scattering can be specially suited for online process monitoring applications. In this paper we analyze the correlation between the Raman spectral features and the presence of electronic defects. Our results confirm the potential of Raman spectroscopy for the indirect detection of point defects which are important for device performance.",

keywords = "Admittance measurement, Materials testing, Measurement techniques, Photovoltaic cells, Raman scattering, Thin film devices",

author = "Ruiz, {C. M.} and X. Fontan{\'e} and A. Fairbrother and V. Izquierdo-Roca and C. Broussillou and S. Bodnar and A. P{\'e}rez-Rodriguez and V. Bermudez",

year = "2012",

doi = "10.1109/PVSC.2012.6317656",

language = "English",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "455--458",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Ruiz, CM, Fontané, X, Fairbrother, A, Izquierdo-Roca, V, Broussillou, C, Bodnar, S, Pérez-Rodriguez, A & Bermudez, V 2012, Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317656, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 455-458, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317656

Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices. / Ruiz, C. M.; Fontané, X.; Fairbrother, A. et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 455-458 6317656 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ruiz, C. M.

AU - Fontané, X.

AU - Fairbrother, A.

AU - Izquierdo-Roca, V.

AU - Broussillou, C.

AU - Bodnar, S.

AU - Pérez-Rodriguez, A.

AU - Bermudez, V.

PY - 2012

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N2 - One of the limitations of online quality control processes is the inability of detecting electronic defects in semiconductor materials. This is particularly important in low cost processes such as electrodeposited Cu(In,Ga)(S,Se)2 solar cells, due to the large number of inhomogeneities that can be expected. Standard techniques for characterizing electronic defects are not suitable for online control. However, optical techniques such as Raman scattering can be specially suited for online process monitoring applications. In this paper we analyze the correlation between the Raman spectral features and the presence of electronic defects. Our results confirm the potential of Raman spectroscopy for the indirect detection of point defects which are important for device performance.

AB - One of the limitations of online quality control processes is the inability of detecting electronic defects in semiconductor materials. This is particularly important in low cost processes such as electrodeposited Cu(In,Ga)(S,Se)2 solar cells, due to the large number of inhomogeneities that can be expected. Standard techniques for characterizing electronic defects are not suitable for online control. However, optical techniques such as Raman scattering can be specially suited for online process monitoring applications. In this paper we analyze the correlation between the Raman spectral features and the presence of electronic defects. Our results confirm the potential of Raman spectroscopy for the indirect detection of point defects which are important for device performance.

KW - Admittance measurement

KW - Materials testing

KW - Measurement techniques

KW - Photovoltaic cells

KW - Raman scattering

KW - Thin film devices

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M3 - Conference contribution

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

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ER -

Ruiz CM, Fontané X, Fairbrother A, Izquierdo-Roca V, Broussillou C, Bodnar S et al. Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 455-458. 6317656. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2012.6317656

Developing Raman scattering as quality control technique: Correlation with presence of electronic defects in CIGS-based devices

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