Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device

Brahim Aissa; Amir A. Abdallah; Atef Zekri; Yahya Zakaria; Maulid M. Kivambe; Said Mansour; Jean Cattin; Jan Haschke; Mathieu Boccard; Christophe Ballif

doi:10.1109/PVSC40753.2019.8980556

Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device

Brahim Aissa, Amir A. Abdallah, Atef Zekri, Yahya Zakaria, Maulid M. Kivambe, Said Mansour, Jean Cattin, Jan Haschke, Mathieu Boccard, Christophe Ballif

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We report on the development of hydrogenated n-type amorphous and microcrystalline silicon oxides ((n)-SiOx:H and (n) μc-SiOx:H, respectively) by PECVD, and their successful integration as n-window layers for silicon heterojunction (SHJ) solar cells devices. These Si-oxides were investigated by means of microRaman spectroscopy, high-resolution TEM and time of flight SIMS. Comparatively to (n) μc-SiOx:H, the (n) a-SiOx:H leads globally to an improvement of the photovoltaic performance, except for open circuit voltage which was higher with the microcrystalline oxide -due probably to a reduction of the parasitic absorption-. The associated temperature coefficients were also investigated towards improving their performance in hot desert conditions.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2667-2674
Number of pages	8
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980556
Publication status	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

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10.1109/PVSC40753.2019.8980556

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Aissa, B., Abdallah, A. A., Zekri, A., Zakaria, Y., Kivambe, M. M., Mansour, S., Cattin, J., Haschke, J., Boccard, M., & Ballif, C. (2019). Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 2667-2674). Article 8980556 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980556

Aissa, Brahim ; Abdallah, Amir A. ; Zekri, Atef et al. / Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 2667-2674 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{de528c182b4745d3bed4dce55c97951e,

title = "Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device",

abstract = "We report on the development of hydrogenated n-type amorphous and microcrystalline silicon oxides ((n)-SiOx:H and (n) μc-SiOx:H, respectively) by PECVD, and their successful integration as n-window layers for silicon heterojunction (SHJ) solar cells devices. These Si-oxides were investigated by means of microRaman spectroscopy, high-resolution TEM and time of flight SIMS. Comparatively to (n) μc-SiOx:H, the (n) a-SiOx:H leads globally to an improvement of the photovoltaic performance, except for open circuit voltage which was higher with the microcrystalline oxide -due probably to a reduction of the parasitic absorption-. The associated temperature coefficients were also investigated towards improving their performance in hot desert conditions.",

author = "Brahim Aissa and Abdallah, {Amir A.} and Atef Zekri and Yahya Zakaria and Kivambe, {Maulid M.} and Said Mansour and Jean Cattin and Jan Haschke and Mathieu Boccard and Christophe Ballif",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980556",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2667--2674",

booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",

address = "United States",

}

Aissa, B , Abdallah, AA , Zekri, A, Zakaria, Y, Kivambe, MM, Mansour, S, Cattin, J, Haschke, J, Boccard, M & Ballif, C 2019, Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980556, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2667-2674, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980556

Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device. / Aissa, Brahim ; Abdallah, Amir A.; Zekri, Atef et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2667-2674 8980556 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device

AU - Aissa, Brahim

AU - Abdallah, Amir A.

AU - Zekri, Atef

AU - Zakaria, Yahya

AU - Kivambe, Maulid M.

AU - Mansour, Said

AU - Cattin, Jean

AU - Haschke, Jan

AU - Boccard, Mathieu

AU - Ballif, Christophe

PY - 2019/6

Y1 - 2019/6

N2 - We report on the development of hydrogenated n-type amorphous and microcrystalline silicon oxides ((n)-SiOx:H and (n) μc-SiOx:H, respectively) by PECVD, and their successful integration as n-window layers for silicon heterojunction (SHJ) solar cells devices. These Si-oxides were investigated by means of microRaman spectroscopy, high-resolution TEM and time of flight SIMS. Comparatively to (n) μc-SiOx:H, the (n) a-SiOx:H leads globally to an improvement of the photovoltaic performance, except for open circuit voltage which was higher with the microcrystalline oxide -due probably to a reduction of the parasitic absorption-. The associated temperature coefficients were also investigated towards improving their performance in hot desert conditions.

AB - We report on the development of hydrogenated n-type amorphous and microcrystalline silicon oxides ((n)-SiOx:H and (n) μc-SiOx:H, respectively) by PECVD, and their successful integration as n-window layers for silicon heterojunction (SHJ) solar cells devices. These Si-oxides were investigated by means of microRaman spectroscopy, high-resolution TEM and time of flight SIMS. Comparatively to (n) μc-SiOx:H, the (n) a-SiOx:H leads globally to an improvement of the photovoltaic performance, except for open circuit voltage which was higher with the microcrystalline oxide -due probably to a reduction of the parasitic absorption-. The associated temperature coefficients were also investigated towards improving their performance in hot desert conditions.

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2667

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BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Aissa B , Abdallah AA , Zekri A, Zakaria Y, Kivambe MM, Mansour S et al. Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2667-2674. 8980556. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980556

Development of N-Type Amorphous and Microcrystalline Hydrogenated Silicon-Oxides (SiOx:H) and Investigation of their Impact as Window Layers on Silicon Heterojunction Solar Cells Device

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