TY - GEN
T1 - Domains inversion in LiNbO3 using electron beam irradiation for phononic crystals
AU - Assouar, M. B.
AU - Vincent, B.
AU - Moubchir, H.
AU - Elmazria, O.
AU - Khelif, A.
AU - Laude, V.
PY - 2006
Y1 - 2006
N2 - We report here, the study of domain inversion in lithium niobate (z-cut) by electron beam irradiation without any static bias associated to wet etching, in view of the fabrication of phononic crystals. The inverted domains are revealed by HF-etching taking advantage of the large difference in etching rate between z+ and z-faces. A pertinent choice of irradiation conditions such as accelerating voltage, probe current and injected dose, (parameters of interest for the geometry and size of the obtained domains), was determined and optimized. Two dimensional structures at the micrometer scale were then realized on z-cut LiNbO3. We demonstrate the achievement of 8μm diameter hexagons, with a very large depth close to 30μm, which depends on the etching time. The obtained structures were characterized before etching by optical microscopy to visualize the inverted domains, and after etching by field emission scanning electron microscopy. These characterisations pointed out the high occupancy rate of obtained structures. Numerical simulations of the realized phononic structure band gap show a frequency band gap around 200MHz.
AB - We report here, the study of domain inversion in lithium niobate (z-cut) by electron beam irradiation without any static bias associated to wet etching, in view of the fabrication of phononic crystals. The inverted domains are revealed by HF-etching taking advantage of the large difference in etching rate between z+ and z-faces. A pertinent choice of irradiation conditions such as accelerating voltage, probe current and injected dose, (parameters of interest for the geometry and size of the obtained domains), was determined and optimized. Two dimensional structures at the micrometer scale were then realized on z-cut LiNbO3. We demonstrate the achievement of 8μm diameter hexagons, with a very large depth close to 30μm, which depends on the etching time. The obtained structures were characterized before etching by optical microscopy to visualize the inverted domains, and after etching by field emission scanning electron microscopy. These characterisations pointed out the high occupancy rate of obtained structures. Numerical simulations of the realized phononic structure band gap show a frequency band gap around 200MHz.
KW - Domain inversion
KW - E-beam exposure
KW - LiNbO
KW - Phononic crystals
UR - http://www.scopus.com/inward/record.url?scp=50249132730&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2006.4349287
DO - 10.1109/ISAF.2006.4349287
M3 - Conference contribution
AN - SCOPUS:50249132730
SN - 142441332X
SN - 9781424413324
T3 - IEEE International Symposium on Applications of Ferroelectrics
BT - 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
T2 - 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
Y2 - 30 July 2006 through 3 August 2006
ER -