Effect of Cu on the microstructure and electrical properties of Cu/ZnO thin films

K. Muhammed Shafi*, R. Vinodkumar, R. Jolly Bose, V. N. Uvais, V. P. Mahadevan Pillai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

The effect of copper layer on the microstructural and electrical properties of copper (Cu)/zinc oxide (ZnO) thin film structure on glass substrate, prepared by radio frequency (RF) magnetron sputtering have been investigated. Cu/ZnO thin film structures possess good microstructural and electrical properties which are correlated with Cu thickness. The crystal structure, elemental analysis, surface topography and electrical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) with an energy dispersive X-ray spectroscopy (EDS) setup, atomic force microscopy (AFM) and four point probe analysis, respectively. The result showed that Cu/ZnO films exhibit high crystallinity with a very sharp intense XRD peak corresponding to lattice reflection plane (0 0 2) of a hexagonal wurtzite structure. Cu/ZnO film with higher copper thickness shows uniform grains which are densely packed and have distinct grain boundary. Cu/ZnO film with optimum copper thickness showed the lowest resistivity of 1.53 × 10-3 Ω-cm and sheet resistance of 5.06 × 10 2 ω/sq.

Original languageEnglish
Pages (from-to)243-248
Number of pages6
JournalJournal of Alloys and Compounds
Volume551
DOIs
Publication statusPublished - 25 Feb 2013
Externally publishedYes

Keywords

  • Cu/ZnO thin films
  • Electric properties
  • Magnetron sputtering
  • Microstructure

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