Abstract
The effect of copper layer on the microstructural and electrical properties of copper (Cu)/zinc oxide (ZnO) thin film structure on glass substrate, prepared by radio frequency (RF) magnetron sputtering have been investigated. Cu/ZnO thin film structures possess good microstructural and electrical properties which are correlated with Cu thickness. The crystal structure, elemental analysis, surface topography and electrical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) with an energy dispersive X-ray spectroscopy (EDS) setup, atomic force microscopy (AFM) and four point probe analysis, respectively. The result showed that Cu/ZnO films exhibit high crystallinity with a very sharp intense XRD peak corresponding to lattice reflection plane (0 0 2) of a hexagonal wurtzite structure. Cu/ZnO film with higher copper thickness shows uniform grains which are densely packed and have distinct grain boundary. Cu/ZnO film with optimum copper thickness showed the lowest resistivity of 1.53 × 10-3 Ω-cm and sheet resistance of 5.06 × 10 2 ω/sq.
Original language | English |
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Pages (from-to) | 243-248 |
Number of pages | 6 |
Journal | Journal of Alloys and Compounds |
Volume | 551 |
DOIs | |
Publication status | Published - 25 Feb 2013 |
Externally published | Yes |
Keywords
- Cu/ZnO thin films
- Electric properties
- Magnetron sputtering
- Microstructure