Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

M. Al Huwayz; D. A. Jameel; S. Alotaibi; S. Alhassan; A. Almalki; N. Al Saqri; Y. Al Saleh; A. Alhassni; A. Almunyif; O. M. Lemine; A. Salhi; M. Henini

doi:10.1007/s00339-023-06626-w

Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

M. Al Huwayz, D. A. Jameel^*, S. Alotaibi, S. Alhassan, A. Almalki, N. Al Saqri, Y. Al Saleh, A. Alhassni, A. Almunyif, O. M. Lemine, A. Salhi, M. Henini

^*Corresponding author for this work

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Abstract

In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I _F/I _R) and built-in potential (ϕ_B) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

Original language	English
Article number	405
Journal	Applied Physics A: Materials Science and Processing
Volume	129
Issue number	6
DOIs	https://doi.org/10.1007/s00339-023-06626-w
Publication status	Published - Jun 2023

Keywords

C–V
DLTS
GaAs
InAs quantum dots (QDs)
I–V
Si

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Al Huwayz, M., Jameel, D. A., Alotaibi, S., Alhassan, S., Almalki, A., Al Saqri, N., Al Saleh, Y., Alhassni, A., Almunyif, A., Lemine, O. M., Salhi, A., & Henini, M. (2023). Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures. Applied Physics A: Materials Science and Processing, 129(6), Article 405. https://doi.org/10.1007/s00339-023-06626-w

@article{73026f07fc1b4e549ae84c09147e7996,

title = "Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures",

abstract = "In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I F/I R) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.",

keywords = "C–V, DLTS, GaAs, InAs quantum dots (QDs), I–V, Si",

author = "{Al Huwayz}, M. and Jameel, {D. A.} and S. Alotaibi and S. Alhassan and A. Almalki and {Al Saqri}, N. and {Al Saleh}, Y. and A. Alhassni and A. Almunyif and Lemine, {O. M.} and A. Salhi and M. Henini",

note = "Publisher Copyright: {\textcopyright} 2023, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.",

year = "2023",

month = jun,

doi = "10.1007/s00339-023-06626-w",

language = "English",

volume = "129",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "6",

}

Al Huwayz, M, Jameel, DA, Alotaibi, S, Alhassan, S, Almalki, A, Al Saqri, N, Al Saleh, Y, Alhassni, A, Almunyif, A, Lemine, OM, Salhi, A & Henini, M 2023, 'Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures', Applied Physics A: Materials Science and Processing, vol. 129, no. 6, 405. https://doi.org/10.1007/s00339-023-06626-w

TY - JOUR

T1 - Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

AU - Al Huwayz, M.

AU - Jameel, D. A.

AU - Alotaibi, S.

AU - Alhassan, S.

AU - Almalki, A.

AU - Al Saqri, N.

AU - Al Saleh, Y.

AU - Alhassni, A.

AU - Almunyif, A.

AU - Lemine, O. M.

AU - Salhi, A.

AU - Henini, M.

PY - 2023/6

Y1 - 2023/6

N2 - In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I F/I R) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

AB - In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I F/I R) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

KW - C–V

KW - DLTS

KW - GaAs

KW - InAs quantum dots (QDs)

KW - I–V

KW - Si

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U2 - 10.1007/s00339-023-06626-w

DO - 10.1007/s00339-023-06626-w

M3 - Article

AN - SCOPUS:85159073344

SN - 0947-8396

VL - 129

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 6

M1 - 405

ER -

Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

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