Electron-Beam-Evaporated Nickel Oxide Thin Films for Application as a Hole Transport Layer in Photovoltaics

Mohammad Istiaque Hossain*, Brahim Aissa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We present the growth of nickel oxide (NiO) thin films as a hole transport material in photovoltaic devices using the e-beam evaporation technique. The metal oxide layers were reactively deposited at a substrate temperature of 200 degrees C using an electron beam evaporator under an oxygen atmosphere. The oxide films reactively grown through electron-beam evaporation were optimized for carrier transport layers. Optical and structural characterizations were performed using ultraviolet-visible (UV-Vis) spectrometry, X-ray diffraction, contact angle measurements, scanning electron microscopy, and Hall effect measurements. The study of these films confirmed that the NiO layer is a suitable candidate for use as a hole transport layer based on Hall effect measurements. A morphological study using field-emission scanning electron microscopy confirmed the growth of compact, uniform, and defect-free metal oxide layers. Contact angle measurements revealed that the films possessed semi-hydrophilic properties, contributing to improved stability by repelling water from their surfaces. The stoichiometry of the films was influenced by the oxygen pressure during deposition, which affected both their morphological and optical features. The NiO films exhibited a transmittance exceeding 80% in the visible spectrum. These findings highlight the potential applications of such nickel oxide films as hole transport material layers.
Original languageEnglish
Article number2809
Number of pages11
JournalProcesses
Volume12
Issue number12
DOIs
Publication statusPublished - Dec 2024

Keywords

  • E-beam evaporation
  • Hole transport materials
  • Nickel oxide
  • Reactive growth

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