TY - JOUR
T1 - Enhanced performances of quantum dot lasers operating at 1.3 μm
AU - Salhi, Abdelmajid
AU - Rainò, Gabriele
AU - Fortunato, Laura
AU - Tasco, Vittorianna
AU - Visimberga, Giuseppe
AU - Martiradonna, Luigi
AU - Todaro, Maria Teresa
AU - De Giorgi, Milena
AU - Cingolani, Roberto
AU - Trampert, Achim
AU - De Vittorio, Massimo
AU - Passaseo, Adriana
PY - 2008/7
Y1 - 2008/7
N2 - Due to their δ-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski-Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 A/cm2 per QD layer and a modal gain of 6 cm-1 per QD layer were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50° C) and high T0 (110 K) from a single-mode device containing six QD layers.
AB - Due to their δ-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski-Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 A/cm2 per QD layer and a modal gain of 6 cm-1 per QD layer were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50° C) and high T0 (110 K) from a single-mode device containing six QD layers.
KW - Modal gain
KW - Quantum dots (QDs)
KW - Semiconductor laser
KW - Threshold current
UR - http://www.scopus.com/inward/record.url?scp=48949099860&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2008.916182
DO - 10.1109/JSTQE.2008.916182
M3 - Article
AN - SCOPUS:48949099860
SN - 1077-260X
VL - 14
SP - 1188
EP - 1196
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
IS - 4
ER -