Enhanced performances of quantum dot lasers operating at 1.3 μm

Abdelmajid Salhi*, Gabriele Rainò, Laura Fortunato, Vittorianna Tasco, Giuseppe Visimberga, Luigi Martiradonna, Maria Teresa Todaro, Milena De Giorgi, Roberto Cingolani, Achim Trampert, Massimo De Vittorio, Adriana Passaseo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

Due to their δ-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski-Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 A/cm2 per QD layer and a modal gain of 6 cm-1 per QD layer were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50° C) and high T0 (110 K) from a single-mode device containing six QD layers.

Original languageEnglish
Pages (from-to)1188-1196
Number of pages9
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume14
Issue number4
DOIs
Publication statusPublished - Jul 2008
Externally publishedYes

Keywords

  • Modal gain
  • Quantum dots (QDs)
  • Semiconductor laser
  • Threshold current

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