TY - GEN
T1 - Evidence of a large elastic band gap in a one-dimensional phononic crystal
AU - Coffy, Etienne
AU - Euphrasie, Sébastien
AU - Vairac, Pascal
AU - Khelif, Abdelkrim
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/1
Y1 - 2016/11/1
N2 - The aim of this work is to study the mechanisms of enlargement of band gaps in phononic strips and to present the characterization of such a structure. Indeed, to our knowledge, the gap-to-midgap ratio of the PC strips used for applications in literature does not exceed 45%. Yet, large band gaps generally imply better performances for phononic devices and a stronger robustness to fabrication tolerances. Using three different structures based on tungsten pillars fixed on a tailored silicon strip, we show that large band gaps can be obtained by coupling Bragg scattering and local resonances. Optical measurements made on a structure of few millimeters show good agreement with numerical calculations. The three periods phononic strip exhibits a main band gap with a gap-to-midgap ratio close to 100% and a maximum attenuation of -40 dB.
AB - The aim of this work is to study the mechanisms of enlargement of band gaps in phononic strips and to present the characterization of such a structure. Indeed, to our knowledge, the gap-to-midgap ratio of the PC strips used for applications in literature does not exceed 45%. Yet, large band gaps generally imply better performances for phononic devices and a stronger robustness to fabrication tolerances. Using three different structures based on tungsten pillars fixed on a tailored silicon strip, we show that large band gaps can be obtained by coupling Bragg scattering and local resonances. Optical measurements made on a structure of few millimeters show good agreement with numerical calculations. The three periods phononic strip exhibits a main band gap with a gap-to-midgap ratio close to 100% and a maximum attenuation of -40 dB.
UR - http://www.scopus.com/inward/record.url?scp=84996486385&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2016.7728683
DO - 10.1109/ULTSYM.2016.7728683
M3 - Conference contribution
AN - SCOPUS:84996486385
T3 - IEEE International Ultrasonics Symposium, IUS
BT - 2016 IEEE International Ultrasonics Symposium, IUS 2016
PB - IEEE Computer Society
T2 - 2016 IEEE International Ultrasonics Symposium, IUS 2016
Y2 - 18 September 2016 through 21 September 2016
ER -