Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor

Xiaofang Pan; Xiaojin Zhao; Amine Bermak; Zhiyong Fan

doi:10.1109/ISCAS.2012.6272023

Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor

Xiaofang Pan^*, Xiaojin Zhao, Amine Bermak, Zhiyong Fan

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.

Original language	English
Pages	3270-3273
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2012.6272023
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of Duration: 20 May 2012 → 23 May 2012

Conference

Conference	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
Country/Territory	Korea, Republic of
City	Seoul
Period	20/05/12 → 23/05/12

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10.1109/ISCAS.2012.6272023

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title = "Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor",

abstract = "In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.",

author = "Xiaofang Pan and Xiaojin Zhao and Amine Bermak and Zhiyong Fan",

year = "2012",

doi = "10.1109/ISCAS.2012.6272023",

language = "English",

pages = "3270--3273",

note = "2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 ; Conference date: 20-05-2012 Through 23-05-2012",

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AU - Pan, Xiaofang

AU - Zhao, Xiaojin

AU - Bermak, Amine

AU - Fan, Zhiyong

PY - 2012

Y1 - 2012

N2 - In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.

AB - In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.

UR - http://www.scopus.com/inward/record.url?scp=84866617760&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2012.6272023

DO - 10.1109/ISCAS.2012.6272023

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T2 - 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012

Y2 - 20 May 2012 through 23 May 2012

ER -

Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor

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