Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

Ashok V. Rao; Said A. Mansour; Arden L. Bernent

doi:10.1016/S0167-577X(96)00156-5

Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

Ashok V. Rao, Said A. Mansour^*, Arden L. Bernent

^*Corresponding author for this work

Purdue University

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10^-4 A/cm² were found in ITO-PZT-ITO capacitors.

Original language	English
Pages (from-to)	255-258
Number of pages	4
Journal	Materials Letters
Volume	29
Issue number	4-6
DOIs	https://doi.org/10.1016/S0167-577X(96)00156-5
Publication status	Published - Dec 1996
Externally published	Yes

Keywords

Capacitor
Conductive oxide
Fatigue resistant
Ferroelectric lead zirconate titanate
Indium tin oxide
Leakage current

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10.1016/S0167-577X(96)00156-5

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title = "Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes",

abstract = "Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10-4 A/cm2 were found in ITO-PZT-ITO capacitors.",

keywords = "Capacitor, Conductive oxide, Fatigue resistant, Ferroelectric lead zirconate titanate, Indium tin oxide, Leakage current",

author = "Rao, {Ashok V.} and Mansour, {Said A.} and Bernent, {Arden L.}",

year = "1996",

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language = "English",

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pages = "255--258",

journal = "Materials Letters",

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TY - JOUR

T1 - Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

AU - Rao, Ashok V.

AU - Mansour, Said A.

AU - Bernent, Arden L.

PY - 1996/12

Y1 - 1996/12

N2 - Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10-4 A/cm2 were found in ITO-PZT-ITO capacitors.

AB - Conductive metal oxide contacts were used in the fabrication of fatigue-resistant lead zirconate titanate (PZT) capacitors. The successful fabrication and characterization of PZT thin-film capacitors with transparent conducting indium tin oxide (ITO) contacts using a combination of metallo-organic decomposition (MOD) and rf-sputtering are described. High remnant polarization, improved fatigue resistance, and a leakage current density of 10-4 A/cm2 were found in ITO-PZT-ITO capacitors.

KW - Capacitor

KW - Conductive oxide

KW - Fatigue resistant

KW - Ferroelectric lead zirconate titanate

KW - Indium tin oxide

KW - Leakage current

UR - http://www.scopus.com/inward/record.url?scp=0030393897&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(96)00156-5

DO - 10.1016/S0167-577X(96)00156-5

M3 - Article

AN - SCOPUS:0030393897

SN - 0167-577X

VL - 29

SP - 255

EP - 258

JO - Materials Letters

JF - Materials Letters

IS - 4-6

ER -

Fabrication of ferroelectric PZT thin film capacitors with indium tin oxide (ITO) electrodes

Abstract

Keywords

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