Abstract
We review here our results concerning laser diodes emitting at 2.38 μm and 2.60 μm. We present an original method allowing to determine the monomolecular, radiative and Auger recombination coefficients A, B and C, as well as the transparency carrier density Ntr, the internal loss αi and the gain coefficient g0 from the differential efficiency and the threshold current density obtained with different laser diodes. We show how these parameters can be used to optimize the number of quantum wells and explain the differences existing between laser diodes emitting at 2.38 and 2.60 μm. At 2.38 μm, we obtained a threshold current density of 76 A/cm2 with a single quantum well laser diode and at 2.60 μm, a Jth of 152 A/cm2 with a double quantum well laser diode. These threshold current densities can be compared favorably to the best reported values in the 0.85-3.0 μm range.
Original language | English |
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Article number | 17 |
Pages (from-to) | 120-129 |
Number of pages | 10 |
Journal | Progress in Biomedical Optics and Imaging - Proceedings of SPIE |
Volume | 5738 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
Event | Novel In-Plane Semiconductor Lasers IV - San Jose, CA, United States Duration: 24 Jan 2005 → 27 Jan 2005 |
Keywords
- Diode lasers
- Epitaxy
- Infrared lasers
- Quantum efficiency
- Quantum wells
- Semiconductor lasers