GaInAsSb/AlGaAsSb laser diodes for the 2-3 μm range

Y. Rouillard*, J. Angellier, A. Salhi, P. Grech, F. Chevrier

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

We review here our results concerning laser diodes emitting at 2.38 μm and 2.60 μm. We present an original method allowing to determine the monomolecular, radiative and Auger recombination coefficients A, B and C, as well as the transparency carrier density Ntr, the internal loss αi and the gain coefficient g0 from the differential efficiency and the threshold current density obtained with different laser diodes. We show how these parameters can be used to optimize the number of quantum wells and explain the differences existing between laser diodes emitting at 2.38 and 2.60 μm. At 2.38 μm, we obtained a threshold current density of 76 A/cm2 with a single quantum well laser diode and at 2.60 μm, a Jth of 152 A/cm2 with a double quantum well laser diode. These threshold current densities can be compared favorably to the best reported values in the 0.85-3.0 μm range.

Original languageEnglish
Article number17
Pages (from-to)120-129
Number of pages10
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5738
DOIs
Publication statusPublished - 2005
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers IV - San Jose, CA, United States
Duration: 24 Jan 200527 Jan 2005

Keywords

  • Diode lasers
  • Epitaxy
  • Infrared lasers
  • Quantum efficiency
  • Quantum wells
  • Semiconductor lasers

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