TY - JOUR
T1 - Growth and characterization of CdTe:Ge:Yb
AU - Sochinskii, N. V.
AU - Saucedo, E.
AU - Abellan, M.
AU - Rodríguez-Fernández, J.
AU - Hidalgo, P.
AU - Piqueras, J.
AU - Ruiz, C. M.
AU - Bermúdez, V.
AU - Diéguez, E.
PY - 2008/4
Y1 - 2008/4
N2 - Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×1017 cm-3 and co-doped with the rare element Yb at the concentration range from 1×1017 to 1×1019 cm-3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×1018 cm-3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.
AB - Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were doped with Ge at the concentration of 5×1017 cm-3 and co-doped with the rare element Yb at the concentration range from 1×1017 to 1×1019 cm-3. The CdTe:Ge:Yb samples were studied by the structural and electrical characterization techniques, low-temperature photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and CL imaging. Experimental findings testify that homogeneous crystals and layers of reasonably good structural quality can be grown with the Yb concentration below the value of 5×1018 cm-3 that is estimated to be the limit for Yb solubility in CdTe:Ge:Yb. These findings seem to be related with the purification effect caused by the interaction of the Yb dopant with the group I residual impurities.
KW - A2. Bridgman technique
KW - A3. Vapor-phase epitaxy
KW - B1. CdTe
KW - B2. Semiconducting II-VI
UR - http://www.scopus.com/inward/record.url?scp=41449093736&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2007.11.080
DO - 10.1016/j.jcrysgro.2007.11.080
M3 - Article
AN - SCOPUS:41449093736
SN - 0022-0248
VL - 310
SP - 2076
EP - 2079
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 7-9
ER -