High Electron-Mobility of a Transparent and Conductive Zr-Doped In2O3Deposited by Reactive Magnetron Sputtering

Brahim Aissa; Yahya Zakaria; Akshath R. Shetty; Ayman Samara; Cedric Broussillou

doi:10.1109/PVSC43889.2021.9518643

High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering

Brahim Aissa, Yahya Zakaria, Akshath R. Shetty, Ayman Samara, Cedric Broussillou

Hamad bin Khalifa University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We report on the optoelectronic properties of zirconium-doped indium oxide layers deposited by RF sputtering, using different oxygen to total flow ratios [r(O2) = O2/Ar, ranging from 1% to 10%]. The results of X-ray diffraction show that the IZrO films grown on glass substrates exhibit mixed crystallographic orientations. The depth profiling of the various elements throughout the thicknesses of the films was determined by time-of-flight secondary ion mass spectrometry. Electron mobility of 110 cm2/V•s with a carrier density of 3.9 × 1020 cm-3, resulting in a sheet resistance of around 20 Ω/sq for 60-nm-thick films, were achieved. Correlations between the physical properties of these films, their optoelectronics characteristics and the r(O2) are also presented and discussed.

Original language	English
Title of host publication	2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	71-73
Number of pages	3
ISBN (Electronic)	9781665419222
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518643
Publication status	Published - 20 Jun 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20/06/21 → 25/06/21

Keywords

IZrO
Optoelectronic
Reactive sputtering
Structural properties
TOF-SIMS

Access to Document

10.1109/PVSC43889.2021.9518643

Cite this

Aissa, B., Zakaria, Y., Shetty, A. R., Samara, A., & Broussillou, C. (2021). High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021 (pp. 71-73). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC43889.2021.9518643

Aissa, Brahim ; Zakaria, Yahya ; Shetty, Akshath R. et al. / High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering. 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 71-73 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{06bc693885e84ddd9630df647d9b95ee,

title = "High Electron-Mobility of a Transparent and Conductive Zr-Doped In2O3Deposited by Reactive Magnetron Sputtering",

abstract = "We report on the optoelectronic properties of zirconium-doped indium oxide layers deposited by RF sputtering, using different oxygen to total flow ratios [r(O2) = O2/Ar, ranging from 1% to 10%]. The results of X-ray diffraction show that the IZrO films grown on glass substrates exhibit mixed crystallographic orientations. The depth profiling of the various elements throughout the thicknesses of the films was determined by time-of-flight secondary ion mass spectrometry. Electron mobility of 110 cm2/V•s with a carrier density of 3.9 × 1020 cm-3, resulting in a sheet resistance of around 20 Ω/sq for 60-nm-thick films, were achieved. Correlations between the physical properties of these films, their optoelectronics characteristics and the r(O2) are also presented and discussed.",

keywords = "IZrO, Optoelectronic, Reactive sputtering, Structural properties, TOF-SIMS",

author = "Brahim Aissa and Yahya Zakaria and Shetty, {Akshath R.} and Ayman Samara and Cedric Broussillou",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",

year = "2021",

month = jun,

day = "20",

doi = "10.1109/PVSC43889.2021.9518643",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "71--73",

booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",

address = "United States",

}

Aissa, B, Zakaria, Y, Shetty, AR, Samara, A & Broussillou, C 2021, High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering. in 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 71-73, 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 20/06/21. https://doi.org/10.1109/PVSC43889.2021.9518643

High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering. / Aissa, Brahim; Zakaria, Yahya; Shetty, Akshath R. et al.
2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 71-73 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High Electron-Mobility of a Transparent and Conductive Zr-Doped In2O3Deposited by Reactive Magnetron Sputtering

AU - Aissa, Brahim

AU - Zakaria, Yahya

AU - Shetty, Akshath R.

AU - Samara, Ayman

AU - Broussillou, Cedric

PY - 2021/6/20

Y1 - 2021/6/20

N2 - We report on the optoelectronic properties of zirconium-doped indium oxide layers deposited by RF sputtering, using different oxygen to total flow ratios [r(O2) = O2/Ar, ranging from 1% to 10%]. The results of X-ray diffraction show that the IZrO films grown on glass substrates exhibit mixed crystallographic orientations. The depth profiling of the various elements throughout the thicknesses of the films was determined by time-of-flight secondary ion mass spectrometry. Electron mobility of 110 cm2/V•s with a carrier density of 3.9 × 1020 cm-3, resulting in a sheet resistance of around 20 Ω/sq for 60-nm-thick films, were achieved. Correlations between the physical properties of these films, their optoelectronics characteristics and the r(O2) are also presented and discussed.

AB - We report on the optoelectronic properties of zirconium-doped indium oxide layers deposited by RF sputtering, using different oxygen to total flow ratios [r(O2) = O2/Ar, ranging from 1% to 10%]. The results of X-ray diffraction show that the IZrO films grown on glass substrates exhibit mixed crystallographic orientations. The depth profiling of the various elements throughout the thicknesses of the films was determined by time-of-flight secondary ion mass spectrometry. Electron mobility of 110 cm2/V•s with a carrier density of 3.9 × 1020 cm-3, resulting in a sheet resistance of around 20 Ω/sq for 60-nm-thick films, were achieved. Correlations between the physical properties of these films, their optoelectronics characteristics and the r(O2) are also presented and discussed.

KW - IZrO

KW - Optoelectronic

KW - Reactive sputtering

KW - Structural properties

KW - TOF-SIMS

UR - http://www.scopus.com/inward/record.url?scp=85115945710&partnerID=8YFLogxK

U2 - 10.1109/PVSC43889.2021.9518643

DO - 10.1109/PVSC43889.2021.9518643

M3 - Conference contribution

AN - SCOPUS:85115945710

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 71

EP - 73

BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Aissa B, Zakaria Y, Shetty AR, Samara A, Broussillou C. High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering. In 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 71-73. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC43889.2021.9518643

High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

EX-QNRF-NPRPS-36: Light Management in Solar Cells using Fault-Tolerant Plasmonics and Metamaterials [MetaSol]

Cite this

High Electron-Mobility of a Transparent and Conductive Zr-Doped In2O3Deposited by Reactive Magnetron Sputtering

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Projects

EX-QNRF-NPRPS-36: Light Management in Solar Cells using Fault-Tolerant Plasmonics and Metamaterials [MetaSol]

Cite this

High Electron-Mobility of a Transparent and Conductive Zr-Doped In₂O₃Deposited by Reactive Magnetron Sputtering