High gain and high speed 1.3 μm InAs/InGaAs quantum dot lasers

M. T. Todaro, A. Salhi, L. Fortunato, R. Cingolani, A. Passaseo, M. De Vittorio

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the fabrication and characterization of single-transverse mode 1.3 μm InAs/InGaAs QD lasers in a wide temperature range. Open eye patterns up to 10 Gb/s are reported, whereas a characteristic temperature of about 110 K has been measured in the whole temperature range (15°C - 85°C). These results were obtained by exploiting heterostructures containing six-layers of high modal gain InAs quantum dots grown without incorporation of p-doping. QD lasers exhibited a saturation modal gain as high as 6 cm-1 per QD layer, which linearly increases with the numbers of the quantum dot layers.

Original languageEnglish
Title of host publicationProceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007
Pages264-267
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 9th International Conference on Transparent Optical Networks, ICTON 2007 - Rome, Italy
Duration: 1 Jul 20075 Jul 2007

Publication series

NameProceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007
Volume2

Conference

Conference2007 9th International Conference on Transparent Optical Networks, ICTON 2007
Country/TerritoryItaly
CityRome
Period1/07/075/07/07

Fingerprint

Dive into the research topics of 'High gain and high speed 1.3 μm InAs/InGaAs quantum dot lasers'. Together they form a unique fingerprint.

Cite this