High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers

Abdelmajid Salhi*, L. Martiradonna, G. Visimberga, V. Tasco, L. Fortunato, M. T. Todaro, R. Cingolani, A. Passaseo, M. D. Vittorio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.

Original languageEnglish
Pages (from-to)1735-1737
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number16
DOIs
Publication statusPublished - 15 Aug 2006
Externally publishedYes

Keywords

  • In(Ga)As
  • Modal gain
  • Quantum dots (QDs)
  • Semiconductor laser

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