Abstract
A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.
Original language | English |
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Pages (from-to) | 1735-1737 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 18 |
Issue number | 16 |
DOIs | |
Publication status | Published - 15 Aug 2006 |
Externally published | Yes |
Keywords
- In(Ga)As
- Modal gain
- Quantum dots (QDs)
- Semiconductor laser