High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes

A. Salhi; Y. Rouillard; J. Angellier; M. Garcia; X. Marcadet

High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes

A. Salhi^*, Y. Rouillard, J. Angellier, M. Garcia, X. Marcadet

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm^-1 and threshold current density per quantum well as low as 34 A/cm² for a 3 mm long-cavity were obtained.

Original language	English
Pages (from-to)	35-36
Number of pages	2
Journal	OSA Trends in Optics and Photonics Series
Volume	96 A
Publication status	Published - 2004
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, United States Duration: 17 May 2004 → 19 May 2004

Cite this

@article{50ffc1867fb741918672c7c424925d46,

title = "High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes",

abstract = "Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm-1 and threshold current density per quantum well as low as 34 A/cm2 for a 3 mm long-cavity were obtained.",

author = "A. Salhi and Y. Rouillard and J. Angellier and M. Garcia and X. Marcadet",

year = "2004",

language = "English",

volume = "96 A",

pages = "35--36",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

}

TY - JOUR

T1 - High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes

AU - Salhi, A.

AU - Rouillard, Y.

AU - Angellier, J.

AU - Garcia, M.

AU - Marcadet, X.

PY - 2004

Y1 - 2004

N2 - Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm-1 and threshold current density per quantum well as low as 34 A/cm2 for a 3 mm long-cavity were obtained.

AB - Strained triple-quantum-well (TQW) GaInAsSb/AlGaAsSb laser diodes were fabricated. Internal losses as low as 4 cm-1 and threshold current density per quantum well as low as 34 A/cm2 for a 3 mm long-cavity were obtained.

UR - http://www.scopus.com/inward/record.url?scp=33645225316&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645225316

SN - 1094-5695

VL - 96 A

SP - 35

EP - 36

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

High performance 2.4 μm GaInAsSb/AlGaAsSb laser diodes

Abstract

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