Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment

C. M. Ruiz; X. Fontané; A. Fairbrother; V. Izquierdo-Roca; C. Broussillou; S. Bodnar; A. Pérez-Rodríguez; V. Bermúdez

doi:10.1063/1.4793418

Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se₂ solar cells: Application for non-destructive defect assessment

C. M. Ruiz^*, X. Fontané, A. Fairbrother, V. Izquierdo-Roca, C. Broussillou, S. Bodnar, A. Pérez-Rodríguez, V. Bermúdez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

This work reports on the electrical and Raman scattering analysis of Cu(In,Ga)Se₂ cells synthesised with different densities of Se and Cu related point defects. The analysis of the Raman spectra from the surface region of the absorbers shows a direct correlation between the spectral features of the main Raman peak and the density of Se vacancies detected by admittance spectroscopy, being sensitive to the presence of vacancy densities higher than 10¹⁵ cm^-3. These results corroborate the potential of Raman scattering for the non-destructive detection of electronic defects with potential impact on the characteristics of the solar cells.

Original language	English
Article number	091106
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4793418
Publication status	Published - 4 Mar 2013
Externally published	Yes

Access to Document

10.1063/1.4793418

Cite this

Ruiz, C. M., Fontané, X., Fairbrother, A., Izquierdo-Roca, V., Broussillou, C., Bodnar, S., Pérez-Rodríguez, A., & Bermúdez, V. (2013). Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se₂ solar cells: Application for non-destructive defect assessment. Applied Physics Letters, 102(9), Article 091106. https://doi.org/10.1063/1.4793418

@article{a66e8b93bfd5470fa1424b18a21f4e44,

title = "Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells: Application for non-destructive defect assessment",

abstract = "This work reports on the electrical and Raman scattering analysis of Cu(In,Ga)Se2 cells synthesised with different densities of Se and Cu related point defects. The analysis of the Raman spectra from the surface region of the absorbers shows a direct correlation between the spectral features of the main Raman peak and the density of Se vacancies detected by admittance spectroscopy, being sensitive to the presence of vacancy densities higher than 1015 cm-3. These results corroborate the potential of Raman scattering for the non-destructive detection of electronic defects with potential impact on the characteristics of the solar cells.",

author = "Ruiz, {C. M.} and X. Fontan{\'e} and A. Fairbrother and V. Izquierdo-Roca and C. Broussillou and S. Bodnar and A. P{\'e}rez-Rodr{\'i}guez and V. Berm{\'u}dez",

year = "2013",

month = mar,

day = "4",

doi = "10.1063/1.4793418",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se2 solar cells

T2 - Application for non-destructive defect assessment

AU - Ruiz, C. M.

AU - Fontané, X.

AU - Fairbrother, A.

AU - Izquierdo-Roca, V.

AU - Broussillou, C.

AU - Bodnar, S.

AU - Pérez-Rodríguez, A.

AU - Bermúdez, V.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - This work reports on the electrical and Raman scattering analysis of Cu(In,Ga)Se2 cells synthesised with different densities of Se and Cu related point defects. The analysis of the Raman spectra from the surface region of the absorbers shows a direct correlation between the spectral features of the main Raman peak and the density of Se vacancies detected by admittance spectroscopy, being sensitive to the presence of vacancy densities higher than 1015 cm-3. These results corroborate the potential of Raman scattering for the non-destructive detection of electronic defects with potential impact on the characteristics of the solar cells.

AB - This work reports on the electrical and Raman scattering analysis of Cu(In,Ga)Se2 cells synthesised with different densities of Se and Cu related point defects. The analysis of the Raman spectra from the surface region of the absorbers shows a direct correlation between the spectral features of the main Raman peak and the density of Se vacancies detected by admittance spectroscopy, being sensitive to the presence of vacancy densities higher than 1015 cm-3. These results corroborate the potential of Raman scattering for the non-destructive detection of electronic defects with potential impact on the characteristics of the solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84875195482&partnerID=8YFLogxK

U2 - 10.1063/1.4793418

DO - 10.1063/1.4793418

M3 - Article

AN - SCOPUS:84875195482

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091106

ER -

Impact of electronic defects on the Raman spectra from electrodeposited Cu(In,Ga)Se₂ solar cells: Application for non-destructive defect assessment

Abstract

Access to Document

Other files and links

Fingerprint

Cite this