Impact of the Oxygen Flow during the Magnetron Sputtering Deposition on the Indium Tin Oxide thin films for Silicon Heterojunction Solar Cell

Brahim Aissa, Yahya Zakaria, Amir A. Abdallah, Maulid M. Kivambe, Ayman Samara, Akshath Raghu Shetty, Jean Cattin, Jan Haschke, Mathieu Boccard, Christophe Ballif

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

We report on the optoelectronic properties of ITO layers deposited by DC sputtering, using different oxygen to total flow ratios [r(O2) = O2/Ar, ranging from 1% to 8%], for silicon heterojunction (SHJ) solar cell application. The depth profiling of the various elements throughout the thicknesses and interfaces of the ITOs and thin films forming the SHJ device was determined by time-of-flight secondary ion mass spectrometry. Finally, the photovoltaic performance of the fabricated SHJ cells was evaluated with respect to the r(O2) into the ITO layers. Lower r(O2) was found to yield the best PV performance which is attributed to lower parasitic resistive losses.

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2659-2666
Number of pages8
ISBN (Electronic)9781728104942
DOIs
Publication statusPublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Keywords

  • Indium Tin Oxide
  • Magnetron sputtering
  • Silicon Heterojunction
  • ToF-SIMS

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