TY - JOUR
T1 - Impact of the structure of Mo(S,Se)2 interfacial region in electrodeposited CuIn(S,Se)2 solar cells
AU - Ruiz, Carmen M.
AU - Pérez-Rodríguez, Alejandro
AU - Arbiol, Jordi
AU - Morante, Joan Ramón
AU - Bermúdez, Verónica
N1 - Publisher Copyright:
© 2014 Wiley-VCH Verlag GmbH & Co. KGaA.
PY - 2015/1
Y1 - 2015/1
N2 - In this study, we investigate the formation of Mo(S,Se)2 layers in the interface region between the absorber and the back contact in electrodeposited CuIn(S,Se)2 (CISSe) solar cells, and its influence on the resulting devices. Mo(S,Se)2 layers are formed spontaneously in the Mo/CI(S,Se) interface during the annealing of the absorber, but have a serious impact on the solar cell performance, being responsible of the conductivity at this interface. In this paper, we demonstrate that the crystal orientation of the Mo(S,Se)2 layer is the relevant parameter that governs the electrical properties of the interface by the generation of an energy barrier. For this, we have analysed two different groups of cells, with high and low Voc, to determine the origin of the differences. C-V analysis suggested the presence of an energy barrier at the back contact that was related to the existence of a Mo(S,Se)2 layer with c-axis oriented perpendicular to the substrate. Simulations taking into account this feature reproduced the behaviour of the low performing cells. Finally, high-resolution transmission electron microscopy observations were performed to clarify the orientation of the Mo(S,Se)2 layers at the CISSe/Mo(S,Se)2 interface, which is determining for the thickness of the Mo(S,Se)2 layer.
AB - In this study, we investigate the formation of Mo(S,Se)2 layers in the interface region between the absorber and the back contact in electrodeposited CuIn(S,Se)2 (CISSe) solar cells, and its influence on the resulting devices. Mo(S,Se)2 layers are formed spontaneously in the Mo/CI(S,Se) interface during the annealing of the absorber, but have a serious impact on the solar cell performance, being responsible of the conductivity at this interface. In this paper, we demonstrate that the crystal orientation of the Mo(S,Se)2 layer is the relevant parameter that governs the electrical properties of the interface by the generation of an energy barrier. For this, we have analysed two different groups of cells, with high and low Voc, to determine the origin of the differences. C-V analysis suggested the presence of an energy barrier at the back contact that was related to the existence of a Mo(S,Se)2 layer with c-axis oriented perpendicular to the substrate. Simulations taking into account this feature reproduced the behaviour of the low performing cells. Finally, high-resolution transmission electron microscopy observations were performed to clarify the orientation of the Mo(S,Se)2 layers at the CISSe/Mo(S,Se)2 interface, which is determining for the thickness of the Mo(S,Se)2 layer.
KW - CuInGaS
KW - Electrical properties
KW - Electrodeposition
KW - HRTEM
KW - MoS
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=84920792416&partnerID=8YFLogxK
U2 - 10.1002/pssa.201431435
DO - 10.1002/pssa.201431435
M3 - Article
AN - SCOPUS:84920792416
SN - 1862-6300
VL - 212
SP - 61
EP - 66
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 1
ER -