@inproceedings{26c0ac31196d47008d95fa777fe6c2f0,
title = "InGaAs/AlAs Metamorphic Asymmetric Spacer Tunnel (mASPAT) Diodes on GaAs Substrate for Microwave/millimetre-wave Applications",
abstract = "A novel, metamorphic Asymmetric Spacer Tunnel (mASPAT) diode structure was grown by solid source Molecular Beam Epitaxy (MBE) system. A metamorphic HEMT (mHEMT) structure was used to optimize the quality of the grown material. Photoluminescence, X-Ray diffraction and Hall Effect were used to assess the material quality. Following the growth of the mASPAT structure using the optimal growth condition, diodes with different mesa sizes were fabricated and characterised. The I-V characteristics of the fabricated devices show asymmetric behavior as expected. The extracted junction resistance, curvature coefficient and the leakage current at -1V show the potential use of the fabricated mASPAT devices on GaAs as a low-cost and high-volume microwave and millimeter-waves detectors.",
keywords = "mASPAT, metamorphic, tunneling diode",
author = "Abdelmajid Salhi and James Sexton and Muttlak, {Saad G.} and Omar Abdulwahid and Mohamed Missous",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019 ; Conference date: 20-08-2019 Through 22-08-2019",
year = "2019",
month = aug,
doi = "10.1109/UCMMT47867.2019.9008328",
language = "English",
series = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies, UCMMT 2019",
address = "United States",
}