Investigating GaSb(001) dry etching by ICP-RIE on a non-silicon containing sample holder with no organic gases

Hamad A. Albrithen*, Gale S. Petrich, Leslie A. Kolodziejski, Abdelmajid Salhi, Abdulrahman A. Almuhanna

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl 2, BCl 3, and SiCl 4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl 2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl 4+Cl 2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.

Original languageEnglish
Title of host publicationCompound Semiconductors for Generating, Emitting and Manipulating Energy
Pages225-230
Number of pages6
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: 28 Nov 20112 Dec 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1396
ISSN (Print)0272-9172

Conference

Conference2011 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period28/11/112/12/11

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