TY - GEN
T1 - Investigating GaSb(001) dry etching by ICP-RIE on a non-silicon containing sample holder with no organic gases
AU - Albrithen, Hamad A.
AU - Petrich, Gale S.
AU - Kolodziejski, Leslie A.
AU - Salhi, Abdelmajid
AU - Almuhanna, Abdulrahman A.
PY - 2012
Y1 - 2012
N2 - We report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl 2, BCl 3, and SiCl 4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl 2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl 4+Cl 2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.
AB - We report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl 2, BCl 3, and SiCl 4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl 2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl 4+Cl 2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.
UR - http://www.scopus.com/inward/record.url?scp=84865000391&partnerID=8YFLogxK
U2 - 10.1557/opl.2012.775
DO - 10.1557/opl.2012.775
M3 - Conference contribution
AN - SCOPUS:84865000391
SN - 9781605113739
T3 - Materials Research Society Symposium Proceedings
SP - 225
EP - 230
BT - Compound Semiconductors for Generating, Emitting and Manipulating Energy
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -