Investigation of the origin of deep levels in CdTe doped with Bi

E. Saucedo; J. Franc; H. Elhadidy; P. Horodysky; C. M. Ruiz; V. Bermúdez; N. V. Sochinskii

doi:10.1063/1.2903512

Investigation of the origin of deep levels in CdTe doped with Bi

E. Saucedo^*, J. Franc, H. Elhadidy, P. Horodysky, C. M. Ruiz, V. Bermúdez, N. V. Sochinskii

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017 - 1019 at. cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

Original language	English
Article number	094901
Journal	Journal of Applied Physics
Volume	103
Issue number	9
DOIs	https://doi.org/10.1063/1.2903512
Publication status	Published - 2008
Externally published	Yes

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title = "Investigation of the origin of deep levels in CdTe doped with Bi",

abstract = "Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017 - 1019 at. cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.",

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doi = "10.1063/1.2903512",

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journal = "Journal of Applied Physics",

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T1 - Investigation of the origin of deep levels in CdTe doped with Bi

AU - Saucedo, E.

AU - Franc, J.

AU - Elhadidy, H.

AU - Horodysky, P.

AU - Ruiz, C. M.

AU - Bermúdez, V.

AU - Sochinskii, N. V.

PY - 2008

Y1 - 2008

N2 - Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017 - 1019 at. cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

AB - Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017 - 1019 at. cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te-Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples.

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DO - 10.1063/1.2903512

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VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Investigation of the origin of deep levels in CdTe doped with Bi

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