Lithium Niobate Surface Structuration for Phononic Fabrication

Sarah Benchabane*, Laurent Robert, Gwenn Ulliac, Samuel Queste, Abdelkrim Khelif, Vincent Laude

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Reactive Ion Etching (RIE) has been used to etch sized holes which are several microns in depth in lithium , mostly on Y- and V-rotated cut substrates, the underlying being the realization of phononic crystal devices. The etching is based on the use of sulfur hexafluoride as the etching . Photoresist and sputtered or electroplated metals masks were and compared to ensure high process selectivity and good verticality. Maximum mask selectivity was found to be the order of 20. Etched depths larger than 10 μm and aspect above 1.5 have been achieved. Sidewall verticality higher 73° is also reported. The technique has been applied to the of phononic SAW devices designed to operate at a around 200 MHz. The phononic structure consists of arrays of 9 μm diameter, with a 10μm period etched in V-cut lithium niobate.

Original languageEnglish
Article number4803529
Pages (from-to)2201-2204
Number of pages4
JournalProceedings - IEEE Ultrasonics Symposium
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China
Duration: 2 Nov 20085 Nov 2008

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