Abstract
Reactive Ion Etching (RIE) has been used to etch sized holes which are several microns in depth in lithium , mostly on Y- and V-rotated cut substrates, the underlying being the realization of phononic crystal devices. The etching is based on the use of sulfur hexafluoride as the etching . Photoresist and sputtered or electroplated metals masks were and compared to ensure high process selectivity and good verticality. Maximum mask selectivity was found to be the order of 20. Etched depths larger than 10 μm and aspect above 1.5 have been achieved. Sidewall verticality higher 73° is also reported. The technique has been applied to the of phononic SAW devices designed to operate at a around 200 MHz. The phononic structure consists of arrays of 9 μm diameter, with a 10μm period etched in V-cut lithium niobate.
Original language | English |
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Article number | 4803529 |
Pages (from-to) | 2201-2204 |
Number of pages | 4 |
Journal | Proceedings - IEEE Ultrasonics Symposium |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
Event | 2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China Duration: 2 Nov 2008 → 5 Nov 2008 |