@inproceedings{387dcfe8ddf245428ef040b583f196a9,
title = "Low-temperature PECVD deposition of highly conductive n-type microcrystalline silicon thin films for optoelectronic applications",
abstract = "We report on the characterization results of doped n-type microcrystalline hydrogenated-silicon (μc-Si: H) films deposited by a plasma-enhanced chemical vapor deposition in the temperature range between 50 and 200°C. The interest in these films arises from their ability to combine a high optical absorption of amorphous silicon part with the electronic behavior of the crystalline silicon one, making them interesting for the production of large electronic devices such as solar cells, image sensors, and flat panels. It is demonstrated that n-type μc-Si: H films with high electrical conductivity can be obtained even at low temperature deposition, around 50°C (σ=12.8 Scm-1). The structural properties of the films have been studied by Raman and infrared spectroscopy that allowed for the determination of the crystalline fraction.",
keywords = "FTIR, Hall Effects, Microcrystalline silicon, Raman spectroscopy, Silicon Heterojunction Solar Cell",
author = "Brahim Aissa and Abdallah, {Amir A.} and Garcia, {Juan L.}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 49th IEEE Photovoltaics Specialists Conference, PVSC 2022 ; Conference date: 05-06-2022 Through 10-06-2022",
year = "2022",
doi = "10.1109/PVSC48317.2022.9938628",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "52--57",
booktitle = "2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022",
address = "United States",
}