Molecularly Engineered Quinoxaline-Pyridyl Pyrazine Polymers for Field-Effect Transistors and Complementary Circuits

John Barron, Salahuddin Attar, Arash Ghobadi, Shubhra Gangopadhyay, Dusan Sredojevic, Mohammed Al-Hashimi*, Suchismita Guha*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Regioregularity in conjugated polymers plays a significant role in enhancing the semiconducting properties and narrowing the optical band gap. Two donor-acceptor copolymers, specifically quinoxaline-thienylenevinylene (P1) and regioregular pyridyl pyrazine-thienylenevinylene (P2), were synthesized and characterized. Their potential applications in organic field-effect transistors (FETs) and complementary inverter circuits were explored. P2 exhibits a narrower absorption spectrum with distinct vibronic peaks compared to P1. In both top-gate and bottom-gate FET architectures, the copolymers display p-type behavior, with P2 demonstrating approximately an order of magnitude higher carrier mobility (similar to 10-3 cm2/(V s)) than P1. The performance of the FETs is further improved by the surface treatment of the source-drain contacts, which is particularly noticeable in P1. These p-type FETs, incorporating P1 and P2, were employed in complementary voltage inverter circuits along with thiazole-selenophene-linked fluorinated isoindigo (IID-TzSe) n-type organic FETs. The P1-IID-TzSe inverter, characterized by balanced p- and n-channels with similar threshold voltages, shows a gain >20 at a supply voltage of 50 V. Similar gains are also observed in the P2-IID-TzSe inverter circuits.
Original languageEnglish
Pages (from-to)1464-1474
Number of pages11
JournalACS Applied Electronic Materials
Volume6
Issue number2
Early online dateFeb 2024
DOIs
Publication statusPublished - 16 Feb 2024
Externally publishedYes

Keywords

  • Complementarycircuits
  • Current-voltage characteristics
  • Density functional theory
  • Dielectric
  • Donor-acceptor copolymer
  • Field-effect transistor

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