Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates

Jan Haschke; Raphaël Monnard; Luca Antognini; Jean Cattin; Amir A. Abdallah; Brahim Aïssa; Maulid M. Kivambe; Nouar Tabet; Mathieu Boccard; Christophe Ballif

doi:10.1063/1.5049262

Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates

Jan Haschke^*, Raphaël Monnard, Luca Antognini, Jean Cattin, Amir A. Abdallah, Brahim Aïssa, Maulid M. Kivambe, Nouar Tabet, Mathieu Boccard, Christophe Ballif

^*Corresponding author for this work

QEERI - Energy Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (Scopus)

Abstract

Today, solar cells are generally optimized for 25°C, whereas in most climates, especially hot and sunny ones, the operating device temperature is usually much higher, e.g. in the range of 60°C. We investigate the use of n-doped nanocrystalline silicon oxide layers (nc-SiO_x:H(n)) as front contact stacks in silicon heterojunction solar cells and compare them with oxide-free front contacts. Whereas a short-circuit current density of 41 mAcm^-2 could be obtained due to the increased transparency of the nc-SiO_x:H(n) layers, the fill-factor is drastically reduced and leads to a reduced efficiency at 25°C. Albeit the FF can be partly recovered at 60°C, the highest efficiencies at 60°C were so far obtained for the solar cells with oxide-free front contact stacks.

Original language	English
Title of host publication	SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
Editors	Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron
Publisher	American Institute of Physics Inc.
ISBN (Print)	9780735417151
DOIs	https://doi.org/10.1063/1.5049262
Publication status	Published - 10 Aug 2018
Event	SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018

Publication series

Name	AIP Conference Proceedings
Volume	1999
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
Country/Territory	Switzerland
City	Lausanne
Period	19/03/18 → 21/03/18

Access to Document

10.1063/1.5049262

Cite this

Haschke, J., Monnard, R., Antognini, L., Cattin, J., Abdallah, A. A., Aïssa, B., Kivambe, M. M., Tabet, N., Boccard, M., & Ballif, C. (2018). Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates. In R. Brendel, J. Poortmans, A. Weeber, G. Hahn, C. Ballif, S. Glunz, & P.-J. Ribeyron (Eds.), SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics Article 030001 (AIP Conference Proceedings; Vol. 1999). American Institute of Physics Inc.. https://doi.org/10.1063/1.5049262

Haschke, Jan ; Monnard, Raphaël ; Antognini, Luca et al. / Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates. SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. editor / Rolf Brendel ; Jef Poortmans ; Arthur Weeber ; Giso Hahn ; Christophe Ballif ; Stefan Glunz ; Pierre-Jean Ribeyron. American Institute of Physics Inc., 2018. (AIP Conference Proceedings).

@inproceedings{0d9cde700aba40b79a64655d843a5ff2,

title = "Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates",

abstract = "Today, solar cells are generally optimized for 25°C, whereas in most climates, especially hot and sunny ones, the operating device temperature is usually much higher, e.g. in the range of 60°C. We investigate the use of n-doped nanocrystalline silicon oxide layers (nc-SiOx:H(n)) as front contact stacks in silicon heterojunction solar cells and compare them with oxide-free front contacts. Whereas a short-circuit current density of 41 mAcm-2 could be obtained due to the increased transparency of the nc-SiOx:H(n) layers, the fill-factor is drastically reduced and leads to a reduced efficiency at 25°C. Albeit the FF can be partly recovered at 60°C, the highest efficiencies at 60°C were so far obtained for the solar cells with oxide-free front contact stacks.",

author = "Jan Haschke and Rapha{\"e}l Monnard and Luca Antognini and Jean Cattin and Abdallah, {Amir A.} and Brahim A{\"i}ssa and Kivambe, {Maulid M.} and Nouar Tabet and Mathieu Boccard and Christophe Ballif",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).; SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics ; Conference date: 19-03-2018 Through 21-03-2018",

year = "2018",

month = aug,

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doi = "10.1063/1.5049262",

language = "English",

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series = "AIP Conference Proceedings",

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Haschke, J, Monnard, R, Antognini, L, Cattin, J, Abdallah, AA , Aïssa, B , Kivambe, MM, Tabet, N, Boccard, M & Ballif, C 2018, Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates. in R Brendel, J Poortmans, A Weeber, G Hahn, C Ballif, S Glunz & P-J Ribeyron (eds), SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics., 030001, AIP Conference Proceedings, vol. 1999, American Institute of Physics Inc., SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics, Lausanne, Switzerland, 19/03/18. https://doi.org/10.1063/1.5049262

Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates. / Haschke, Jan; Monnard, Raphaël; Antognini, Luca et al.
SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Jef Poortmans; Arthur Weeber; Giso Hahn; Christophe Ballif; Stefan Glunz; Pierre-Jean Ribeyron. American Institute of Physics Inc., 2018. 030001 (AIP Conference Proceedings; Vol. 1999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates

AU - Haschke, Jan

AU - Monnard, Raphaël

AU - Antognini, Luca

AU - Cattin, Jean

AU - Abdallah, Amir A.

AU - Aïssa, Brahim

AU - Kivambe, Maulid M.

AU - Tabet, Nouar

AU - Boccard, Mathieu

AU - Ballif, Christophe

PY - 2018/8/10

Y1 - 2018/8/10

N2 - Today, solar cells are generally optimized for 25°C, whereas in most climates, especially hot and sunny ones, the operating device temperature is usually much higher, e.g. in the range of 60°C. We investigate the use of n-doped nanocrystalline silicon oxide layers (nc-SiOx:H(n)) as front contact stacks in silicon heterojunction solar cells and compare them with oxide-free front contacts. Whereas a short-circuit current density of 41 mAcm-2 could be obtained due to the increased transparency of the nc-SiOx:H(n) layers, the fill-factor is drastically reduced and leads to a reduced efficiency at 25°C. Albeit the FF can be partly recovered at 60°C, the highest efficiencies at 60°C were so far obtained for the solar cells with oxide-free front contact stacks.

AB - Today, solar cells are generally optimized for 25°C, whereas in most climates, especially hot and sunny ones, the operating device temperature is usually much higher, e.g. in the range of 60°C. We investigate the use of n-doped nanocrystalline silicon oxide layers (nc-SiOx:H(n)) as front contact stacks in silicon heterojunction solar cells and compare them with oxide-free front contacts. Whereas a short-circuit current density of 41 mAcm-2 could be obtained due to the increased transparency of the nc-SiOx:H(n) layers, the fill-factor is drastically reduced and leads to a reduced efficiency at 25°C. Albeit the FF can be partly recovered at 60°C, the highest efficiencies at 60°C were so far obtained for the solar cells with oxide-free front contact stacks.

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DO - 10.1063/1.5049262

M3 - Conference contribution

AN - SCOPUS:85051919533

SN - 9780735417151

T3 - AIP Conference Proceedings

BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics

A2 - Brendel, Rolf

A2 - Poortmans, Jef

A2 - Weeber, Arthur

A2 - Hahn, Giso

A2 - Ballif, Christophe

A2 - Glunz, Stefan

A2 - Ribeyron, Pierre-Jean

PB - American Institute of Physics Inc.

T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics

Y2 - 19 March 2018 through 21 March 2018

ER -

Haschke J, Monnard R, Antognini L, Cattin J, Abdallah AA , Aïssa B et al. Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates. In Brendel R, Poortmans J, Weeber A, Hahn G, Ballif C, Glunz S, Ribeyron PJ, editors, SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. American Institute of Physics Inc. 2018. 030001. (AIP Conference Proceedings). doi: 10.1063/1.5049262

Nanocrystalline silicon oxide stacks for silicon heterojunction solar cells for hot climates

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