Novel barrier-well heterostructure diodes for microwave and mm-wave applications

We present two novel barrier-well heterostructure diodes, for use as zero bias detectors in microwave and mm-wave applications. One based on the GaAs platform and one based on In_0.53Ga₀.₄₇As lattice matched to InP. This is achieved by adding quantum wells to Asymmetric Spacer Layer Tunnel (ASPAT) diodes next to the barrier. The DC characteristics of these new diodes were simulated in SILVACO Atlas TCAD software using experimentally validated physical models based upon conventional ASPAT diodes. The highest extracted curvature coefficients of these diodes at zero bias were 33 V⁻¹ and 35 V⁻¹ for GaAs and In_0.53Ga₀.₄₇As based structures respectively. A C-V analysis was performed, and it was found that the addition of quantum wells reduced the zero-bias capacitance of these devices when compared with the standard ASPAT diode. The new diodes exhibited estimated cut-off frequencies of 532 GHz and 800 GHz for the GaAs and In_0.53Ga₀.₄₇As based structures respectively. The lower cut off frequencies for the In_0.18Ga_0.82As/AlAs/GaAs