TY - GEN
T1 - Numerical analysis of the temperature effects on single junction solar cells efficiencies
AU - Hossain, Mohammad I.
AU - Bousselham, Abdelkader
AU - Alharbi, Fahhad H.
PY - 2013
Y1 - 2013
N2 - A numerical analysis of the temperature effects on single-junction solar cells efficiencies is presented. In this work the temperature effects are included both explicitly in the input empirical parameters such as the mobility, carrier concentration, affinity energy, etc. and implicitly considered in the governing physics. The semiconductors used in this study are Si, GaAs, and CdTe, and the temperature range were chosen to be in the range from 300 K to 350 K to mimic realistic operation range. For the Si cell, the efficiency dropped from 25.84% at room temperature to around 20.95% at 350 K, for GaAS cell from 28.01% to 23.95%, and for CdTe from 18.87% to 17.20%. Quantitatively CdTe cells are less affected by temperature change compared to Si and GaAs Cells; but, within the used range, still Si and GaAs cells are more efficient than CdTe.
AB - A numerical analysis of the temperature effects on single-junction solar cells efficiencies is presented. In this work the temperature effects are included both explicitly in the input empirical parameters such as the mobility, carrier concentration, affinity energy, etc. and implicitly considered in the governing physics. The semiconductors used in this study are Si, GaAs, and CdTe, and the temperature range were chosen to be in the range from 300 K to 350 K to mimic realistic operation range. For the Si cell, the efficiency dropped from 25.84% at room temperature to around 20.95% at 350 K, for GaAS cell from 28.01% to 23.95%, and for CdTe from 18.87% to 17.20%. Quantitatively CdTe cells are less affected by temperature change compared to Si and GaAs Cells; but, within the used range, still Si and GaAs cells are more efficient than CdTe.
KW - SCAPS
KW - Solar cell simulation
KW - Solar cells
KW - Temperature effects
UR - http://www.scopus.com/inward/record.url?scp=84896471295&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2013.6744264
DO - 10.1109/PVSC.2013.6744264
M3 - Conference contribution
AN - SCOPUS:84896471295
SN - 9781479932993
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 779
EP - 781
BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Y2 - 16 June 2013 through 21 June 2013
ER -