Abstract
In this paper, a current-mode VLSI architecture enabling on read-out skin detection without the need for any on-chip memory elements is proposed. An important feature of the proposed architecture is that it removes the need for demosaicing. Color separation is achieved using the strong wavelength dependence of the absorption coefficient in silicon. This wavelength dependence causes a very shallow absorption of blue light and enables red light to penetrate deeply in silicon. A triple-well process, allowing a P-well to be placed inside an N-well, is chosen to fabricate three vertically integrated photodiodes acting as the RGB color detector for each pixel. Pixels of an input RGB image are classified as skin or non-skin pixels using a statistical skin color model, chosen to offer an acceptable trade-off between skin detection performance and implementation complexity. A single processing unit is used to classify all pixels of the input RGB image. This results in reduced mismatch and also in an increased pixel fill-factor. Furthermore, the proposed current-mode architecture is programmable, allowing external control of all classifier parameters to compensate for mismatch and changing lighting conditions.
Original language | English |
---|---|
Pages (from-to) | 206-214 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5274 |
DOIs | |
Publication status | Published - 2004 |
Externally published | Yes |
Event | Microelectronics: Design, Technology and Packaging - Perth, WA, Australia Duration: 10 Dec 2003 → 12 Dec 2003 |
Keywords
- CMOS imager
- On-chip processing
- Skin detection
- Triple-well CMOS process