On the existence of terahertz plasmons in two-dimensional semiconductor heterostructures

Hasan T. Abbas, Lilia Aljihmani, Qammer H. Abbasi, Khalid A. Qaraqe

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Plasmons existing along a semiconductor heterostructure found in a high electron mobility transistor are studied. With the help of the electronic properties of group III-V semiconductor materials, a multilayer structure is described using an equivalent transmission line network. The existence of surface waves is investigated using the transverse resonance method, and it is established that the complex conductivity of the two-dimensional electron gas with a negative imaginary part yields surface plasmons in the terahertz frequency domain.

Original languageEnglish
Title of host publicationProceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1246-1247
Number of pages2
ISBN (Electronic)9781728105635
DOIs
Publication statusPublished - Sept 2019
Externally publishedYes
Event21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019 - Granada, Spain
Duration: 9 Sept 201913 Sept 2019

Publication series

NameProceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

Conference

Conference21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
Country/TerritorySpain
CityGranada
Period9/09/1913/09/19

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