Picosecond timescale carrier dynamics of InAs quantum dots: The role of a continuum background

G. Rainó*, G. Visimberga, A. Salhi, M. Todaro, M. De Vittorio, A. Passaseo, R. Cingolani, M. De Giorgi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We have investigated the ultrafast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots emitting at 1.3 μm by means of time resolved photoluminescence upconversion measurements with a time resolution of about 200 fs. The detection energies scan the spectral region from the energy of the quantum dot excitonic transition up to the barrier layer absorption edge. We found, under high excitation intensity, that the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.

Original languageEnglish
Pages (from-to)445-448
Number of pages4
JournalSuperlattices and Microstructures
Volume43
Issue number5-6
DOIs
Publication statusPublished - May 2008
Externally publishedYes

Keywords

  • Carrier relaxation
  • Quantum dots
  • Ultrafast spectroscopy

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