Piecewise BJT process spread compensation exploiting base recombination current

Dapeng Sun; Man Kay Law; Bo Wang; Pui In Mak; Rui P. Martins

doi:10.1109/ISCAS.2017.8050475

Piecewise BJT process spread compensation exploiting base recombination current

Dapeng Sun, Man Kay Law, Bo Wang, Pui In Mak, Rui P. Martins

CSE Information & Computing Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

In this paper, a piecewise bipolar junction transistor (BJT) process spread compensation scheme is presented. By exploiting the strong correlation between the BJT saturation current and the piecewise base recombination current, the process spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) can be reduced over a wide temperature range. Fabricated in standard 0.18-μm CMOS, the chip prototype achieves a measured Vbe standard deviation (STD) of 1.1 mV (1.8 mV) from -30 to 60 °C (-30 to 120 °C) over 12 samples, corresponding to a 2.9X (1.8X) improvement when compared to the measured Vbe STD of 3.24 mV at 25 °C from 15 standalone BJT samples with constant external bias current using the same process.

Original language	English
Title of host publication	IEEE International Symposium on Circuits and Systems
Subtitle of host publication	From Dreams to Innovation, ISCAS 2017 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467368520
DOIs	https://doi.org/10.1109/ISCAS.2017.8050475
Publication status	Published - 25 Sept 2017
Event	50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 - Baltimore, United States Duration: 28 May 2017 → 31 May 2017

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
Country/Territory	United States
City	Baltimore
Period	28/05/17 → 31/05/17

Keywords

Bipolar junction transistor (BJT)
base recombination current
piecewise process spread compensation

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10.1109/ISCAS.2017.8050475

Cite this

Sun, D., Law, M. K., Wang, B., Mak, P. I., & Martins, R. P. (2017). Piecewise BJT process spread compensation exploiting base recombination current. In IEEE International Symposium on Circuits and Systems: From Dreams to Innovation, ISCAS 2017 - Conference Proceedings Article 8050475 (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2017.8050475

Sun, Dapeng ; Law, Man Kay ; Wang, Bo et al. / Piecewise BJT process spread compensation exploiting base recombination current. IEEE International Symposium on Circuits and Systems: From Dreams to Innovation, ISCAS 2017 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. (Proceedings - IEEE International Symposium on Circuits and Systems).

@inproceedings{081468eef28c4f13b8f35765ff07a83b,

title = "Piecewise BJT process spread compensation exploiting base recombination current",

abstract = "In this paper, a piecewise bipolar junction transistor (BJT) process spread compensation scheme is presented. By exploiting the strong correlation between the BJT saturation current and the piecewise base recombination current, the process spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) can be reduced over a wide temperature range. Fabricated in standard 0.18-μm CMOS, the chip prototype achieves a measured Vbe standard deviation (STD) of 1.1 mV (1.8 mV) from -30 to 60 °C (-30 to 120 °C) over 12 samples, corresponding to a 2.9X (1.8X) improvement when compared to the measured Vbe STD of 3.24 mV at 25 °C from 15 standalone BJT samples with constant external bias current using the same process.",

keywords = "Bipolar junction transistor (BJT), base recombination current, piecewise process spread compensation",

author = "Dapeng Sun and Law, {Man Kay} and Bo Wang and Mak, {Pui In} and Martins, {Rui P.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 ; Conference date: 28-05-2017 Through 31-05-2017",

year = "2017",

month = sep,

day = "25",

doi = "10.1109/ISCAS.2017.8050475",

language = "English",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE International Symposium on Circuits and Systems",

address = "United States",

}

Sun, D, Law, MK, Wang, B, Mak, PI & Martins, RP 2017, Piecewise BJT process spread compensation exploiting base recombination current. in IEEE International Symposium on Circuits and Systems: From Dreams to Innovation, ISCAS 2017 - Conference Proceedings., 8050475, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., 50th IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, United States, 28/05/17. https://doi.org/10.1109/ISCAS.2017.8050475

Piecewise BJT process spread compensation exploiting base recombination current. / Sun, Dapeng; Law, Man Kay; Wang, Bo et al.
IEEE International Symposium on Circuits and Systems: From Dreams to Innovation, ISCAS 2017 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. 8050475 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Piecewise BJT process spread compensation exploiting base recombination current

AU - Sun, Dapeng

AU - Law, Man Kay

AU - Wang, Bo

AU - Mak, Pui In

AU - Martins, Rui P.

PY - 2017/9/25

Y1 - 2017/9/25

N2 - In this paper, a piecewise bipolar junction transistor (BJT) process spread compensation scheme is presented. By exploiting the strong correlation between the BJT saturation current and the piecewise base recombination current, the process spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) can be reduced over a wide temperature range. Fabricated in standard 0.18-μm CMOS, the chip prototype achieves a measured Vbe standard deviation (STD) of 1.1 mV (1.8 mV) from -30 to 60 °C (-30 to 120 °C) over 12 samples, corresponding to a 2.9X (1.8X) improvement when compared to the measured Vbe STD of 3.24 mV at 25 °C from 15 standalone BJT samples with constant external bias current using the same process.

AB - In this paper, a piecewise bipolar junction transistor (BJT) process spread compensation scheme is presented. By exploiting the strong correlation between the BJT saturation current and the piecewise base recombination current, the process spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) can be reduced over a wide temperature range. Fabricated in standard 0.18-μm CMOS, the chip prototype achieves a measured Vbe standard deviation (STD) of 1.1 mV (1.8 mV) from -30 to 60 °C (-30 to 120 °C) over 12 samples, corresponding to a 2.9X (1.8X) improvement when compared to the measured Vbe STD of 3.24 mV at 25 °C from 15 standalone BJT samples with constant external bias current using the same process.

KW - Bipolar junction transistor (BJT)

KW - base recombination current

KW - piecewise process spread compensation

UR - http://www.scopus.com/inward/record.url?scp=85032663010&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2017.8050475

DO - 10.1109/ISCAS.2017.8050475

M3 - Conference contribution

AN - SCOPUS:85032663010

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

BT - IEEE International Symposium on Circuits and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 50th IEEE International Symposium on Circuits and Systems, ISCAS 2017

Y2 - 28 May 2017 through 31 May 2017

ER -

Sun D, Law MK, Wang B, Mak PI, Martins RP. Piecewise BJT process spread compensation exploiting base recombination current. In IEEE International Symposium on Circuits and Systems: From Dreams to Innovation, ISCAS 2017 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. 8050475. (Proceedings - IEEE International Symposium on Circuits and Systems). doi: 10.1109/ISCAS.2017.8050475

Piecewise BJT process spread compensation exploiting base recombination current

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