Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

P. Adamiec; A. Salhi; R. Bohdan; A. Bercha; F. Dybala; W. Trzeciakowski; Y. Rouillard; A. Joullié

doi:10.1063/1.1815069

Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

P. Adamiec^*, A. Salhi, R. Bohdan, A. Bercha, F. Dybala, W. Trzeciakowski, Y. Rouillard, A. Joullié

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

InGaAsSb/AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar. the threshold current varied from 240 to 400 A/cm², showing a minimum of 200 A/cm ² close to 8 kbar, and the emission spectra shifted to shorter wavelengths by up to 700 mm (i.e., from 2.4 μm to 1.7 μm). This exceptional tuning range could be very useful in tunable diode laser absorption spectroscopy.

Original language	English
Pages (from-to)	4292-4294
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1815069
Publication status	Published - 8 Nov 2004
Externally published	Yes

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title = "Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range",

abstract = "InGaAsSb/AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar. the threshold current varied from 240 to 400 A/cm2, showing a minimum of 200 A/cm 2 close to 8 kbar, and the emission spectra shifted to shorter wavelengths by up to 700 mm (i.e., from 2.4 μm to 1.7 μm). This exceptional tuning range could be very useful in tunable diode laser absorption spectroscopy.",

author = "P. Adamiec and A. Salhi and R. Bohdan and A. Bercha and F. Dybala and W. Trzeciakowski and Y. Rouillard and A. Joulli{\'e}",

year = "2004",

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doi = "10.1063/1.1815069",

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T1 - Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

AU - Adamiec, P.

AU - Salhi, A.

AU - Bohdan, R.

AU - Bercha, A.

AU - Dybala, F.

AU - Trzeciakowski, W.

AU - Rouillard, Y.

AU - Joullié, A.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - InGaAsSb/AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar. the threshold current varied from 240 to 400 A/cm2, showing a minimum of 200 A/cm 2 close to 8 kbar, and the emission spectra shifted to shorter wavelengths by up to 700 mm (i.e., from 2.4 μm to 1.7 μm). This exceptional tuning range could be very useful in tunable diode laser absorption spectroscopy.

AB - InGaAsSb/AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar. the threshold current varied from 240 to 400 A/cm2, showing a minimum of 200 A/cm 2 close to 8 kbar, and the emission spectra shifted to shorter wavelengths by up to 700 mm (i.e., from 2.4 μm to 1.7 μm). This exceptional tuning range could be very useful in tunable diode laser absorption spectroscopy.

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U2 - 10.1063/1.1815069

DO - 10.1063/1.1815069

M3 - Article

AN - SCOPUS:10844249253

SN - 0003-6951

VL - 85

SP - 4292

EP - 4294

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

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