Proof of the existence of large complete band gaps in high frequency silicon phononic crystal plates

S. Mohammadi; A. A. Eftekhar; A. Khelif; W. D. Hunt; A. Adibi

Proof of the existence of large complete band gaps in high frequency silicon phononic crystal plates

S. Mohammadi^*, A. A. Eftekhar, A. Khelif, W. D. Hunt, A. Adibi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We show, for the first time, the evidence of the existence of large phononic band gaps (PBGs) in two-dimensional phononic crystal (PC) plates formed by etching a hexagonal (honeycomb) array of air holes through a free standing plate of silicon (Si). A CMOS compatible fabrication process is used on a Si on insulator (SOI) substrate to realize the PC devices. More than 30dB attenuation is observed for eight periods of the hexagonal lattice PC at high frequency region, i.e. 133MHz with a band gap to mid gap ratio of 27%. We show that the experimental results agree very well with the theoretical predictions for the PBG. This result opens a new direction in the implementation of high frequency practical PC structures for a variety of applications especially wireless communication, and sensing.

Original language	English
Pages (from-to)	53-55
Number of pages	3
Journal	Proceedings - European Conference on Noise Control
Publication status	Published - 2008
Externally published	Yes
Event	7th European Conference on Noise Control 2008, EURONOISE 2008 - Paris, France Duration: 29 Jun 2008 → 4 Jul 2008

Cite this

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title = "Proof of the existence of large complete band gaps in high frequency silicon phononic crystal plates",

abstract = "We show, for the first time, the evidence of the existence of large phononic band gaps (PBGs) in two-dimensional phononic crystal (PC) plates formed by etching a hexagonal (honeycomb) array of air holes through a free standing plate of silicon (Si). A CMOS compatible fabrication process is used on a Si on insulator (SOI) substrate to realize the PC devices. More than 30dB attenuation is observed for eight periods of the hexagonal lattice PC at high frequency region, i.e. 133MHz with a band gap to mid gap ratio of 27%. We show that the experimental results agree very well with the theoretical predictions for the PBG. This result opens a new direction in the implementation of high frequency practical PC structures for a variety of applications especially wireless communication, and sensing.",

author = "S. Mohammadi and Eftekhar, {A. A.} and A. Khelif and Hunt, {W. D.} and A. Adibi",

year = "2008",

language = "English",

pages = "53--55",

journal = "Proceedings - European Conference on Noise Control",

issn = "2226-5147",

note = "7th European Conference on Noise Control 2008, EURONOISE 2008 ; Conference date: 29-06-2008 Through 04-07-2008",

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TY - JOUR

T1 - Proof of the existence of large complete band gaps in high frequency silicon phononic crystal plates

AU - Mohammadi, S.

AU - Eftekhar, A. A.

AU - Khelif, A.

AU - Hunt, W. D.

AU - Adibi, A.

PY - 2008

Y1 - 2008

N2 - We show, for the first time, the evidence of the existence of large phononic band gaps (PBGs) in two-dimensional phononic crystal (PC) plates formed by etching a hexagonal (honeycomb) array of air holes through a free standing plate of silicon (Si). A CMOS compatible fabrication process is used on a Si on insulator (SOI) substrate to realize the PC devices. More than 30dB attenuation is observed for eight periods of the hexagonal lattice PC at high frequency region, i.e. 133MHz with a band gap to mid gap ratio of 27%. We show that the experimental results agree very well with the theoretical predictions for the PBG. This result opens a new direction in the implementation of high frequency practical PC structures for a variety of applications especially wireless communication, and sensing.

AB - We show, for the first time, the evidence of the existence of large phononic band gaps (PBGs) in two-dimensional phononic crystal (PC) plates formed by etching a hexagonal (honeycomb) array of air holes through a free standing plate of silicon (Si). A CMOS compatible fabrication process is used on a Si on insulator (SOI) substrate to realize the PC devices. More than 30dB attenuation is observed for eight periods of the hexagonal lattice PC at high frequency region, i.e. 133MHz with a band gap to mid gap ratio of 27%. We show that the experimental results agree very well with the theoretical predictions for the PBG. This result opens a new direction in the implementation of high frequency practical PC structures for a variety of applications especially wireless communication, and sensing.

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M3 - Conference article

AN - SCOPUS:84874929156

SN - 2226-5147

SP - 53

EP - 55

JO - Proceedings - European Conference on Noise Control

JF - Proceedings - European Conference on Noise Control

T2 - 7th European Conference on Noise Control 2008, EURONOISE 2008

Y2 - 29 June 2008 through 4 July 2008

ER -

Proof of the existence of large complete band gaps in high frequency silicon phononic crystal plates

Abstract

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