Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition

B. Asenjo*, C. Guilln, A. M. Chaparro, E. Saucedo, V. Bermudez, D. Lincot, J. Herrero, M. T. Gutirrez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

In2S3 films have been chemically deposited on ITO coated glass substrates by chemical bath deposition, using different deposition times and precursor concentrations. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD and micro-Raman, and surface morphology by SEM microscopy analysis. Also, the direct and indirect band-gaps and the surface gap states were studied with surface photovoltage spectroscopy (SPS). We proposed that electronic properties of the In2S3 samples are controlled by two features: shallow tail states and a broad band centred at 1.5 eV approximately. Their relation with the structure is discussed, suggesting that their origin is related to defects created on the S sub-lattice, and then both defects are intrinsic to the material.

Original languageEnglish
Pages (from-to)1629-1633
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Volume71
Issue number12
DOIs
Publication statusPublished - Dec 2010
Externally publishedYes

Keywords

  • A. Thin films
  • B. Chemical synthesis
  • C. Raman spectroscopy

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