Abstract
A quantitative statistical analysis of infrared images (IR), under forward bias and under illuminated condition, and electroluminescence (EL) images for damaged monocrystalline photovoltaic (PV) modules after 20 years, is herein proposed. The proposed methodology relies in the analysis frequency histograms of red, blue and green channel of IR images and the intensity of EL images. Dark IR images provide local information, useful to distinguish disconnected cell interconnect (DCI), humidity corrosion (HC) and finger interruption (FC) in highly damaged solar cells. This extends and generalizes the correlation between dark IR and EL established in the literature for thin-film solar cells also to monocrystalline silicon photovoltaic modules.
| Original language | English |
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| Number of pages | 6 |
| Publication status | Published - Jun 2017 |
| Externally published | Yes |
| Event | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C, United States Duration: 25 Jun 2017 → 30 Jun 2017 |
Conference
| Conference | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
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| Country/Territory | United States |
| City | Washington, D.C |
| Period | 25/06/17 → 30/06/17 |