Rapid thermal processing of CuInSe2 electroplated precursors for CuIn(S,Se)2-based thin film solar cells

C. Broussillou; G. Savidand; L. Parissi; J. S. Jaime-Ferrer; P. P. Grand; C. Hubert; O. Roussel; E. Saucedo; V. Bermudez; M. Andrieux; M. H. Berger; M. Jeandin

doi:10.1016/j.egypro.2010.07.004

Rapid thermal processing of CuInSe₂ electroplated precursors for CuIn(S,Se)₂-based thin film solar cells

C. Broussillou^*, G. Savidand, L. Parissi, J. S. Jaime-Ferrer, P. P. Grand, C. Hubert, O. Roussel, E. Saucedo, V. Bermudez, M. Andrieux, M. H. Berger, M. Jeandin

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

During the elaboration of standard CISEL™cells, electroplated CuInSe₂ precursors undergo a rapid thermal processing (RTP) in a sulfur-containing atmosphere to promote grain growth and enable sulfurization of the precursor. The aim of this work is to show how structural and morphological properties of the CuIn(S,Se)₂-based solar cells can be modified with RTP parameters, namely temperature, heating rate, and sulfur addition. X-ray diffractograms show that the preferential (112) orientation of the electrodeposited CuInSe₂ precursor is maintained after annealing but the coefficient of crystallographic texture can be modified with specific RTP parameters. It is also shown that the quantity of sulfur incorporated in the chalcopyrite lattice can be controlled and reaches almost pure CuInS₂ according to the sulfur quantity used during the RTP. Another effect of the RTP annealing is to form a Mo(S,Se)₂ layer which can lead to a quasi-ohmic contact between the molybdenum and the absorber. The properties of the Mo(S,Se)₂ buffer layer are also studied according to the process parameters and an increase of the annealing temperature or of the sulfur concentration tends to increase the thickness of this layer.

Original language	English
Pages (from-to)	9-17
Number of pages	9
Journal	Energy Procedia
Volume	2
Issue number	1
DOIs	https://doi.org/10.1016/j.egypro.2010.07.004
Publication status	Published - Aug 2010
Externally published	Yes
Event	Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting - Strasbourg, France Duration: 7 Jun 2009 → 12 Jun 2009

Keywords

Chalcopyrite
CuInS
CuInSe
Morphology
Rapid thermal processing
Structural properties
Sulfurization

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10.1016/j.egypro.2010.07.004

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@article{c669f44d79bc416cb19b2cfb5087e0e5,

title = "Rapid thermal processing of CuInSe2 electroplated precursors for CuIn(S,Se)2-based thin film solar cells",

abstract = "During the elaboration of standard CISEL{\texttrademark}cells, electroplated CuInSe2 precursors undergo a rapid thermal processing (RTP) in a sulfur-containing atmosphere to promote grain growth and enable sulfurization of the precursor. The aim of this work is to show how structural and morphological properties of the CuIn(S,Se)2-based solar cells can be modified with RTP parameters, namely temperature, heating rate, and sulfur addition. X-ray diffractograms show that the preferential (112) orientation of the electrodeposited CuInSe2 precursor is maintained after annealing but the coefficient of crystallographic texture can be modified with specific RTP parameters. It is also shown that the quantity of sulfur incorporated in the chalcopyrite lattice can be controlled and reaches almost pure CuInS2 according to the sulfur quantity used during the RTP. Another effect of the RTP annealing is to form a Mo(S,Se)2 layer which can lead to a quasi-ohmic contact between the molybdenum and the absorber. The properties of the Mo(S,Se)2 buffer layer are also studied according to the process parameters and an increase of the annealing temperature or of the sulfur concentration tends to increase the thickness of this layer.",

keywords = "Chalcopyrite, CuInS, CuInSe, Morphology, Rapid thermal processing, Structural properties, Sulfurization",

author = "C. Broussillou and G. Savidand and L. Parissi and Jaime-Ferrer, {J. S.} and Grand, {P. P.} and C. Hubert and O. Roussel and E. Saucedo and V. Bermudez and M. Andrieux and Berger, {M. H.} and M. Jeandin",

year = "2010",

month = aug,

doi = "10.1016/j.egypro.2010.07.004",

language = "English",

volume = "2",

pages = "9--17",

journal = "Energy Procedia",

issn = "1876-6102",

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number = "1",

note = "Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting ; Conference date: 07-06-2009 Through 12-06-2009",

}

TY - JOUR

T1 - Rapid thermal processing of CuInSe2 electroplated precursors for CuIn(S,Se)2-based thin film solar cells

AU - Broussillou, C.

AU - Savidand, G.

AU - Parissi, L.

AU - Jaime-Ferrer, J. S.

AU - Grand, P. P.

AU - Hubert, C.

AU - Roussel, O.

AU - Saucedo, E.

AU - Bermudez, V.

AU - Andrieux, M.

AU - Berger, M. H.

AU - Jeandin, M.

PY - 2010/8

Y1 - 2010/8

N2 - During the elaboration of standard CISEL™cells, electroplated CuInSe2 precursors undergo a rapid thermal processing (RTP) in a sulfur-containing atmosphere to promote grain growth and enable sulfurization of the precursor. The aim of this work is to show how structural and morphological properties of the CuIn(S,Se)2-based solar cells can be modified with RTP parameters, namely temperature, heating rate, and sulfur addition. X-ray diffractograms show that the preferential (112) orientation of the electrodeposited CuInSe2 precursor is maintained after annealing but the coefficient of crystallographic texture can be modified with specific RTP parameters. It is also shown that the quantity of sulfur incorporated in the chalcopyrite lattice can be controlled and reaches almost pure CuInS2 according to the sulfur quantity used during the RTP. Another effect of the RTP annealing is to form a Mo(S,Se)2 layer which can lead to a quasi-ohmic contact between the molybdenum and the absorber. The properties of the Mo(S,Se)2 buffer layer are also studied according to the process parameters and an increase of the annealing temperature or of the sulfur concentration tends to increase the thickness of this layer.

AB - During the elaboration of standard CISEL™cells, electroplated CuInSe2 precursors undergo a rapid thermal processing (RTP) in a sulfur-containing atmosphere to promote grain growth and enable sulfurization of the precursor. The aim of this work is to show how structural and morphological properties of the CuIn(S,Se)2-based solar cells can be modified with RTP parameters, namely temperature, heating rate, and sulfur addition. X-ray diffractograms show that the preferential (112) orientation of the electrodeposited CuInSe2 precursor is maintained after annealing but the coefficient of crystallographic texture can be modified with specific RTP parameters. It is also shown that the quantity of sulfur incorporated in the chalcopyrite lattice can be controlled and reaches almost pure CuInS2 according to the sulfur quantity used during the RTP. Another effect of the RTP annealing is to form a Mo(S,Se)2 layer which can lead to a quasi-ohmic contact between the molybdenum and the absorber. The properties of the Mo(S,Se)2 buffer layer are also studied according to the process parameters and an increase of the annealing temperature or of the sulfur concentration tends to increase the thickness of this layer.

KW - Chalcopyrite

KW - CuInS

KW - CuInSe

KW - Morphology

KW - Rapid thermal processing

KW - Structural properties

KW - Sulfurization

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U2 - 10.1016/j.egypro.2010.07.004

DO - 10.1016/j.egypro.2010.07.004

M3 - Conference article

AN - SCOPUS:77957790406

SN - 1876-6102

VL - 2

SP - 9

EP - 17

JO - Energy Procedia

JF - Energy Procedia

IS - 1

T2 - Inorganic and Nanostructured Photovoltaics - Symposium B at the E-MRS 2009 Spring Meeting

Y2 - 7 June 2009 through 12 June 2009

ER -

Rapid thermal processing of CuInSe₂ electroplated precursors for CuIn(S,Se)₂-based thin film solar cells

Abstract

Keywords

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