Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm

K. O'Brien; S. J. Sweeney; A. R. Adams; B. N. Murdin; A. Salhi; Y. Rouillard; A. Joullié

doi:10.1063/1.2243973

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm

K. O'Brien^*, S. J. Sweeney, A. R. Adams, B. N. Murdin, A. Salhi, Y. Rouillard, A. Joullié

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T₀ values.

Original language	English
Article number	051104
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2243973
Publication status	Published - 2006
Externally published	Yes

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@article{e26b4498ff2d4d32a29477fb16e36bef,

title = "Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm",

abstract = "The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T0 values.",

author = "K. O'Brien and Sweeney, {S. J.} and Adams, {A. R.} and Murdin, {B. N.} and A. Salhi and Y. Rouillard and A. Joulli{\'e}",

year = "2006",

doi = "10.1063/1.2243973",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm

AU - O'Brien, K.

AU - Sweeney, S. J.

AU - Adams, A. R.

AU - Murdin, B. N.

AU - Salhi, A.

AU - Rouillard, Y.

AU - Joullié, A.

PY - 2006

Y1 - 2006

N2 - The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T0 values.

AB - The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T0 values.

UR - http://www.scopus.com/inward/record.url?scp=33748444618&partnerID=8YFLogxK

U2 - 10.1063/1.2243973

DO - 10.1063/1.2243973

M3 - Article

AN - SCOPUS:33748444618

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051104

ER -

Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm

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