@inproceedings{2898060daa1a47fc9379b0ef4d7b6820,
title = "SiC Mosfet versus Si IGBT based H-bridge quasi-Z-source converter",
abstract = "H-bridge quasi-Z-Source (HBqZS) converter became attractive solution for integration of photovoltaic (PV) panels to low voltage grid due to single stage power conversion. In this paper, a comparison analysis of two power semiconductor technologies, SiC-Mosfet and Si-IGBT, applied to HBqZS converter is Prasented. The comparison includes: efficiency and losses distribution among converter's components, impact of switching frequency on the parameters of passive components, as well as cost for both technologies. Finally, hardware SiC-Mosfet model is compared with simulation analysis.",
keywords = "Comparison, Efficiency, H-bridge quasi-Z-Source (HBqZS) converter, Si-IGBT, SiC-MOSFET",
author = "Tomasz Gajowik and Kamil Mozdzynski and Mariusz Malinowski and Khalid Ghazi and Haitam Abu-Rub",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 12th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018 ; Conference date: 10-04-2018 Through 12-04-2018",
year = "2018",
month = jun,
day = "4",
doi = "10.1109/CPE.2018.8372612",
language = "English",
series = "Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--5",
booktitle = "Proceedings - 2018 IEEE 12th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2018",
address = "United States",
}