SiC power devices and applications in quasi-Z-source converters/inverters

Maoxing Li; Haitham Abu-Rub; Yushan Liu; Baoming Ge; Zainal Salam

doi:10.1109/CENCON.2015.7409564

SiC power devices and applications in quasi-Z-source converters/inverters

Maoxing Li, Haitham Abu-Rub, Yushan Liu, Baoming Ge, Zainal Salam

HBKU College of Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction temperature than silicon power devices, but also introduce significant decrease in the system volume and weight, and provide high reliability and high efficiency to power electronic systems. In this paper, a review of SiC devices in terms of characteristics, development, and applications are presented. And the SiC power device based quasi-Z-Source matrix converter and inverter are compared with the Silicon-IGBT based ones, respectively, demonstrating a competitive solution for the future development of such converters/inverters.

Original language	English
Title of host publication	2015 IEEE Conference on Energy Conversion, CENCON 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-336
Number of pages	6
ISBN (Electronic)	9781479985982
DOIs	https://doi.org/10.1109/CENCON.2015.7409564
Publication status	Published - 2015
Event	2nd IEEE Conference on Energy Conversion, CENCON 2015 - Johor Bahru, Malaysia Duration: 19 Oct 2015 → 20 Oct 2015

Publication series

Name	2015 IEEE Conference on Energy Conversion, CENCON 2015

Conference

Conference	2nd IEEE Conference on Energy Conversion, CENCON 2015
Country/Territory	Malaysia
City	Johor Bahru
Period	19/10/15 → 20/10/15

Keywords

impedance source
inverter
matrix converter
power loss
Silicon carbide

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10.1109/CENCON.2015.7409564

Cite this

Li, M., Abu-Rub, H., Liu, Y., Ge, B., & Salam, Z. (2015). SiC power devices and applications in quasi-Z-source converters/inverters. In 2015 IEEE Conference on Energy Conversion, CENCON 2015 (pp. 331-336). Article 7409564 (2015 IEEE Conference on Energy Conversion, CENCON 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CENCON.2015.7409564

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abstract = "The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction temperature than silicon power devices, but also introduce significant decrease in the system volume and weight, and provide high reliability and high efficiency to power electronic systems. In this paper, a review of SiC devices in terms of characteristics, development, and applications are presented. And the SiC power device based quasi-Z-Source matrix converter and inverter are compared with the Silicon-IGBT based ones, respectively, demonstrating a competitive solution for the future development of such converters/inverters.",

keywords = "impedance source, inverter, matrix converter, power loss, Silicon carbide",

author = "Maoxing Li and Haitham Abu-Rub and Yushan Liu and Baoming Ge and Zainal Salam",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2nd IEEE Conference on Energy Conversion, CENCON 2015 ; Conference date: 19-10-2015 Through 20-10-2015",

year = "2015",

doi = "10.1109/CENCON.2015.7409564",

language = "English",

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Li, M, Abu-Rub, H, Liu, Y, Ge, B & Salam, Z 2015, SiC power devices and applications in quasi-Z-source converters/inverters. in 2015 IEEE Conference on Energy Conversion, CENCON 2015., 7409564, 2015 IEEE Conference on Energy Conversion, CENCON 2015, Institute of Electrical and Electronics Engineers Inc., pp. 331-336, 2nd IEEE Conference on Energy Conversion, CENCON 2015, Johor Bahru, Malaysia, 19/10/15. https://doi.org/10.1109/CENCON.2015.7409564

SiC power devices and applications in quasi-Z-source converters/inverters. / Li, Maoxing; Abu-Rub, Haitham; Liu, Yushan et al.
2015 IEEE Conference on Energy Conversion, CENCON 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 331-336 7409564 (2015 IEEE Conference on Energy Conversion, CENCON 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - SiC power devices and applications in quasi-Z-source converters/inverters

AU - Li, Maoxing

AU - Abu-Rub, Haitham

AU - Liu, Yushan

AU - Ge, Baoming

AU - Salam, Zainal

PY - 2015

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N2 - The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction temperature than silicon power devices, but also introduce significant decrease in the system volume and weight, and provide high reliability and high efficiency to power electronic systems. In this paper, a review of SiC devices in terms of characteristics, development, and applications are presented. And the SiC power device based quasi-Z-Source matrix converter and inverter are compared with the Silicon-IGBT based ones, respectively, demonstrating a competitive solution for the future development of such converters/inverters.

AB - The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction temperature than silicon power devices, but also introduce significant decrease in the system volume and weight, and provide high reliability and high efficiency to power electronic systems. In this paper, a review of SiC devices in terms of characteristics, development, and applications are presented. And the SiC power device based quasi-Z-Source matrix converter and inverter are compared with the Silicon-IGBT based ones, respectively, demonstrating a competitive solution for the future development of such converters/inverters.

KW - impedance source

KW - inverter

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KW - power loss

KW - Silicon carbide

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SiC power devices and applications in quasi-Z-source converters/inverters

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